Hot insertion protection device and method for look-ahead dynamic temperature monitoring

A technology of dynamic temperature and protection devices, applied in emergency protection circuit devices, electrical components, etc., can solve problems such as high-current MOS burnout, achieve the effect of improving the protection system and reducing VGS voltage

Active Publication Date: 2022-05-24
SUZHOU LANGCHAO INTELLIGENT TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a thermal insertion protection device and method for forward-looking dynamic temperature monitoring, which aims to solve the problem in the prior art that large currents easily cause MOS burnout, to ensure that the MOS operation is in a safe working area, and to improve The purpose of the protection system

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  • Hot insertion protection device and method for look-ahead dynamic temperature monitoring
  • Hot insertion protection device and method for look-ahead dynamic temperature monitoring
  • Hot insertion protection device and method for look-ahead dynamic temperature monitoring

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Embodiment Construction

[0027] In order to clearly illustrate the technical features of the solution, the present invention will be described in detail below through specific embodiments and in conjunction with the accompanying drawings. The following disclosure provides many different embodiments or examples for implementing different structures of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. It should be noted that the components illustrated in the figures are not necessarily drawn to scale. Descriptions of well-known components and processing techniques and processes are omitted from the present invention to avoid unneces...

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Abstract

According to the hot plug protection device and method for look-ahead dynamic temperature monitoring, the hot plug protection device is additionally arranged, an MOS is embedded into an IC chip, it is ensured that a temperature monitoring reporter can read the most accurate data and obtain the corresponding Rds (on) value, VGS voltage conversion can be more accurately and effectively controlled, and then the purposes of reducing VGS voltage, reducing VGS voltage and improving VGS voltage conversion efficiency are achieved. Therefore, when a large current or a short circuit occurs, the capability of limiting the conduction current can better ensure that the MOS is operated in a safe working area, and the purpose of improving the protection system is achieved. The MOS is embedded into the IC, and the temperature monitoring reporter is added to ensure that the reading value is accurate and is not influenced by external factors; the MOS is embedded into the IC, and a base and source conduction impedance comparator is added, so that the Rds (on) parameter of the MOS can be ensured not to be influenced by external factors corresponding to the temperature change; the VGS voltage is reduced to limit the output of the Id current; the Id current is inhibited to ensure that the MOS is operated in a safe working area; and the influence of an RC buffer time length error outside the IC is not limited.

Description

technical field [0001] The invention relates to the technical field of server design, in particular to a hot-insertion protection device and method for forward-looking dynamic temperature monitoring. Background technique [0002] In a typical server, many hot-insertion protection methods are provided. For example, an external MOSFET is used as the conduction path, and the Gat switching speed is controlled internally by the IC or the durability of the MOSFET itself is used for protection. For example, figure 1 shown. [0003] When a large current occurs at the output terminal, the monitoring sends a signal to notify the gate controller to turn off the MOSFET, blocking the input to provide energy and causing the output terminal to burn out. Under normal circumstances, Vin=12V, VD=12V, VS=12V, VDS=0V, at the moment of high current, Vin=12V, VD=12V, VS is 0V due to short circuit or other reasons, VDS=12- 0=12V, the actual figure 2 As shown, VDS=13.32V, the instantaneous curr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H7/20
CPCH02H7/205
Inventor 陈宥任
Owner SUZHOU LANGCHAO INTELLIGENT TECH CO LTD
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