Long-wavelength led homoepitaxial structure, its preparation method and application

A homoepitaxial, long-wavelength technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reduced atomic migration ability, difficulty in epitaxial growth, and increased defect surface, so as to improve incorporation efficiency, promote popularization and application, The effect of improving quantum efficiency

Active Publication Date: 2022-06-24
JIANGSU INST OF ADVANCED SEMICON CO LTD
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Problems solved by technology

However, the epitaxial growth of GaN-based red LEDs (wavelength ≥ 600nm) is extremely difficult. The main reasons are: 1. The lattice mismatch between InGaN and GaN with high In composition (In% ≥ 30%) is very large, and the mismatch The dislocation density will be very high, resulting in a higher polarization field and a stronger quantum-confined Steinko effect; second, to increase the In composition in InGaN quantum wells, it is necessary to reduce the growth temperature (generally much lower than that of growing blue and green quantum wells). growth temperature), resulting in a reduction in the ability of atoms to migrate, which will increase defects and cause surface roughening
Both will lead to a sharp drop in its luminous efficiency

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  • Long-wavelength led homoepitaxial structure, its preparation method and application
  • Long-wavelength led homoepitaxial structure, its preparation method and application

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preparation example Construction

[0076] In one embodiment, the preparation method specifically includes:

[0077] at a first temperature, sequentially forming a porous structure layer, a first InGaN layer and a first GaN layer on the substrate, thereby forming the buffer layer;

[0078] growing a relaxation layer on the buffer layer at a second temperature, the first temperature < the second temperature;

[0079] growing a stress release layer on the relaxation layer at a third temperature, where the first temperature

[0080] A multi-quantum well light-emitting layer is grown on the stress release layer at a fourth temperature, where the first temperature≤fourth temperature≤third temperature.

[0081] In one embodiment, the preparation method specifically includes:

[0082] First, at a fifth temperature, a polycrystalline material layer or an amorphous material layer is grown on the substrate, and then at a first temperature, a first InGaN layer is sequenti...

Embodiment 1

[0102] A long-wavelength LED homoepitaxial structure can refer to figure 1 , its preparation method comprises the steps:

[0103] (1) Put the n-type GaN single crystal substrate into the growth chamber of the MOCVD equipment, set the temperature in the growth chamber to about 750 °C, and first grow a porous SiN layer with a thickness of about 5 nm on the substrate. Temperature about 800℃, SiH 4 The throughput is about 5slm, NH 3 The flow rate is about 50slm, the growth time is about 60s-120s, the pore size of the pores contained in the formed porous structure is about 10nm-100nm, and the porosity is about 10%-30%, and then continue to grow on the porous SiN layer. a first InGaN layer with a thickness of about 5 nm, a first GaN layer with a thickness of about 5 nm, thereby forming a buffer layer;

[0104] (2) Raising the temperature in the growth chamber to about 850° C., and growing a first InGaN / GaN superlattice on the buffer layer, the thickness of a single GaN layer in t...

Embodiment 2

[0145] A long-wavelength LED homoepitaxial structure can also refer to figure 1 , its preparation method comprises the steps:

[0146] (1) Put the n-type GaN single crystal substrate into the growth chamber of the MOCVD equipment, set the temperature in the growth chamber to about 700 °C, and first grow a porous SiN layer with a thickness of about 1 nm on the substrate. Temperature about 850℃, SiH 4 The throughput is about 2slm, NH 3 The input amount is about 20slm, the growth time is about 60s-80s, and then the first InGaN layer with a thickness of about 10nm and a first GaN layer with a thickness of about 10nm are continuously grown on the porous SiN layer to form a buffer layer;

[0147] (2) Raising the temperature in the growth chamber to about 900° C., and growing a first InGaN / GaN superlattice on the buffer layer, the thickness of a single GaN layer in the first InGaN / GaN superlattice About 2nm, the thickness of a single InGaN layer is about 10 times that of a single ...

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Abstract

The application discloses a long-wavelength LED homoepitaxial structure, its preparation method and application. The long-wavelength LED homoepitaxial structure includes: a GaN single crystal substrate of the first conductivity type; and, a buffer layer, a relaxation layer, a stress release layer, a multi-quantum well light-emitting layer and A semiconductor layer of the second conductivity type. This application takes advantage of the characteristics of low defect density and high atomic step density of GaN single crystal substrate, and effectively alleviates the problem of high In composition by setting a buffer layer, a relaxation layer, and a stress release layer between the substrate and the multi-quantum well light-emitting layer. The compressive stress between InGaN and GaN significantly improves the incorporation efficiency of In, and overall increases the epitaxial growth temperature of high-In composition InGaN light-emitting quantum wells, and realizes the high-quality, high-In composition InGaN multi-quantum well light-emitting layer. growth, greatly improving the quantum efficiency of red LEDs.

Description

technical field [0001] The present application relates to a semiconductor light-emitting structure, in particular to a long-wavelength LED homoepitaxial structure, a preparation method and application thereof, and belongs to the technical field of semiconductors. Background technique [0002] At present, Micro-LED has many problems in the field of display technology that need to be solved urgently, such as smaller-sized Micro-LED devices have higher requirements on the fabrication process and equipment, as well as technical difficulties such as full-color display and mass transfer. Among them, the realization of full-color display, especially the GaN-based red Micro-LED with high luminous efficiency is of great significance to this technical field. [0003] The current display uses are all AlInGaP-based red Mini-LEDs. Although the luminous efficiency is slightly higher, when the size is further reduced, the surface recombination is intensified, and the efficiency will drop s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/02H01L33/00
CPCH01L33/025H01L33/12H01L33/0075
Inventor 王国斌闫其昂刘宗亮
Owner JIANGSU INST OF ADVANCED SEMICON CO LTD
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