A kind of preparation method of near ultraviolet LED with composite electron blocking layer

An electron blocking layer, near-ultraviolet technology, applied in circuits, electrical components, nanotechnology for materials and surface science, etc., can solve problems such as low light efficiency, improve luminous efficiency, relieve compressive stress, and improve holes extended effect

Active Publication Date: 2018-09-25
SINO NITRIDE SEMICON
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Problems solved by technology

Unlike blue light, the primary problem facing UV LED technology is its low light efficiency

Method used

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  • A kind of preparation method of near ultraviolet LED with composite electron blocking layer
  • A kind of preparation method of near ultraviolet LED with composite electron blocking layer

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preparation example Construction

[0024] A preparation method of a near-ultraviolet LED with a composite electron blocking layer, comprising the following steps:

[0025] S1, the Al 2 o 3The substrate is treated in a hydrogen atmosphere with a reaction chamber pressure of 100 torr at 1080°C-1100°C for 5-10 minutes, and then the temperature and pressure are reduced to keep the temperature at 530°C-550°C, and the reaction chamber pressure is 500torr. Under a hydrogen atmosphere, The V / III molar ratio is 500-1300, and a low-temperature GaN buffer layer with a thickness of 20-30 nanometers is three-dimensionally grown.

[0026] S2, keeping the temperature at 1000-1500° C., the reaction chamber pressure at 200-300 torr, and the V / III molar ratio at 1000-1300 in a hydrogen atmosphere, growing a high-temperature u-GaN layer with a thickness of 1-3 microns.

[0027] S3, keep the temperature at 1000-1500°C, the pressure of the reaction chamber is 100-200torr, under the hydrogen atmosphere, the V / III molar ratio is 10...

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Abstract

A preparation method of a near-ultraviolet LED with a composite electronic barrier layer comprises: growing a low-temperature GaN buffer layer, a high-temperature u-GaN layer and an n-GaN layer sequentially in a metal organic compound gas epitaxial reaction chamber, growing an InxGa1-xN / AlyGa1-yN multiple quantum wells active region of 5-10 cycles, and growing a p-Aly2Inx2Ga1-x2-y2N electronic barrier layer 30-80 nm in thickness; growing a p-Aly2Ga1-y2N / Aly1Inx1Ga1-x1-yiN composite electronic barrier layer of multi-cycle superlattice structure on the p-Aly2Inx2Ga1-x2-y2N electronic barrier layer, introducing Cp2Mg as a p-doping source, and growing p-InGaN 2-3 nm in thickness. The active region hole injection efficiency of ultraviolet LEDs is improved, pressure stress borne by the active region is relieved, horizontal hole expansion is improved, and luminous efficiency of the ultraviolet LEDs is improved accordingly.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a high-efficiency near-ultraviolet LED with a composite electron blocking layer. Background technique [0002] UV LEDs are diodes that emit ultraviolet light. It generally refers to LEDs with a central wavelength of light emission below 400nm. Ultraviolet LEDs (UV LEDs) are mainly used in biomedicine, anti-counterfeiting identification, purification (water, air, etc.), computer data storage, and military affairs. Moreover, with the development of technology, new applications will continue to appear to replace the original technology and products. Ultraviolet LEDs have broad market application prospects. For example, ultraviolet LED phototherapy instruments are very popular medical devices in the future, but the current technology is still growing period. As another major industry direction after semiconductor lighting, semiconductor ultraviolet li...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/32B82Y30/00
CPCB82Y30/00H01L33/007H01L33/06H01L33/12H01L33/325
Inventor 贾传宇殷淑仪张国义
Owner SINO NITRIDE SEMICON
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