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IGBT short circuit detection and protection circuit and short circuit detection and protection method thereof

A short-circuit detection and circuit technology, which is applied in the protection circuit and its short-circuit detection, IGBT short-circuit detection, and protection fields, can solve problems such as slow response speed, and achieve the effects of reducing damage risk, improving safety, and improving response speed

Pending Publication Date: 2022-05-06
深圳青铜剑技术有限公司
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  • Claims
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Problems solved by technology

[0006] This application provides an IGBT short-circuit detection and protection circuit and its short-circuit detection and protection method, aiming to solve the problem of slow response speed when performing short-circuit detection / protection on IGBT in the related art

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  • IGBT short circuit detection and protection circuit and short circuit detection and protection method thereof
  • IGBT short circuit detection and protection circuit and short circuit detection and protection method thereof
  • IGBT short circuit detection and protection circuit and short circuit detection and protection method thereof

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Embodiment Construction

[0033] In order to make the purpose, technical solutions and advantages of the application more obvious and understandable, the following will clearly and completely describe the application in conjunction with the embodiments of the application and the corresponding drawings, wherein the same or similar symbols throughout represent the same or similar elements or elements having the same or similar functions. It should be understood that the various embodiments of the application described below are only used to explain the application, and are not intended to limit the application, that is, based on the various embodiments of the application, those skilled in the art will not make an inventive step. All other embodiments obtained under the premise of labor all belong to the protection scope of this application. In addition, the technical features involved in the various embodiments of the present application described below may be combined with each other as long as they do ...

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Abstract

The invention provides an IGBT short circuit detection and protection circuit and a short circuit detection and protection method thereof. The IGBT short circuit detection circuit comprises a sampling circuit, a comparison circuit and a timing circuit. The timing circuit is connected to the comparison circuit, the comparison circuit is connected to the sampling circuit, and the sampling circuit is used for being connected with stray inductance between an auxiliary emitter and a power emitter in an IGBT to be tested; the sampling circuit is used for collecting the voltage of the stray inductance; the comparison circuit is used for comparing the voltage of the stray inductance with a preset reference voltage and outputting a first signal according to a comparison result; the timing circuit is used for outputting a second signal indicating whether the IGBT to be detected is short-circuited according to the duration of the first signal in the preset level state, and the duration of the first signal in the preset level state is the duration of the rising edge of the current flowing through the stray inductor. According to the IGBT short-circuit detection method and device, the response speed during short-circuit detection of the IGBT is improved, so that the damage risk of the IGBT during short circuit is reduced, and meanwhile, the safety of the IGBT is also improved.

Description

【Technical field】 [0001] The present application relates to the technical field of power electronic devices, in particular to an IGBT short-circuit detection and protection circuit and a short-circuit detection and protection method thereof. 【Background technique】 [0002] IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is composed of BJT (Bipolar Junction Transistor, bipolar junction transistor) and MOSFET (Metal-Oxide-SemiconductorField-Effect Transistor, metal-oxide-semiconductor field-effect transistor ) is a composite fully-controlled voltage-driven power semiconductor device, which combines the advantages of the above two devices, that is, has a small driving power and a low saturation voltage drop, which makes it very suitable for applications where the DC voltage is 600V and above converter systems, such as AC motors, frequency converters, switching power supplies and lighting circuits, etc. [0003] In related technologies, the short-cir...

Claims

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Application Information

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IPC IPC(8): G01R31/26G01R31/52G01R19/00H02H7/20H02H3/08
CPCG01R31/2608G01R31/52G01R19/00H02H7/205H02H3/08
Inventor 吴晓光黄辉傅俊寅汪之涵
Owner 深圳青铜剑技术有限公司
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