Method for estimating reference interval of on-orbit single event upset rate of device
A single-particle flip, reference interval technology, applied in probabilistic CAD, geometric CAD, design optimization/simulation, etc., can solve problems such as low data accuracy, low curve fitting accuracy, and increased acquisition difficulty, and achieves a good level. , the effect of high confidence
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[0055] The implementation steps of the method for determining the reference interval of the on-track single event turnover rate of the 28nm SRAM memory circuit in the present invention are as follows:
[0056] 1. Carry out the ground heavy ion irradiation test, and obtain the experimental data of the device single event flip cross section (σ) and incident ion parameters (LET);
[0057](1) Refer to the single particle test data of the device closest to the target device structure and process to determine the type of ion to be selected. The selected ions should not only include the ions at the beginning of the single event reversal of the target device, but also include the ions whose single event reversal reaches the saturation cross section of the single event reversal. Generally, no less than five data points need to be obtained. For example, Xilinx's Artix 7FPGA also uses a 28nm CMOS process. According to published literature, it is found that its internal CRAM structure sti...
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