Multi-grid radio frequency inductive coupling ion source

Abstract

The invention belongs to the technical field of ion beam control, and particularly relates to a multi-grid radio frequency inductive coupling ion source. A plasma discharge chamber is located below a radio frequency coupling antenna and is a cubic cavity composed of a dielectric coupling window, a discharge chamber side wall and an extraction grid of a rectangular grid extraction system, and an ion source shielding water-cooling shell and an installation back plate are arranged outside the plasma discharge chamber. Symmetrically arranged antenna clamping seats are arranged between the upper part of the plasma discharge chamber and the mounting back plate, and a dielectric coupling window is arranged between the two antenna clamping seats; the radio frequency coupling antenna is installed on the antenna clamping seat, an elastic lead system is arranged between the side wall of the plasma discharge chamber and the ion source shielding water-cooling shell, a rectangular grid leading-out system is arranged at the bottom of the plasma discharge chamber, and a lead clamping ring is installed on the upper portion of the installation back plate. According to the invention, high-uniformity collimated ion beam current can be generated in a large size range, and compared with a two-gate structure and a three-gate structure, the uniformity of the high-uniformity collimated ion beam current is remarkably improved.

Description

technical field [0001] The invention belongs to the technical field of ion beam control, and in particular relates to a multi-grid radio frequency induction coupling ion source. Background technique [0002] The characteristic of RF inductively coupled ion source is that it can produce high density pure plasma. It provides current density and uniformity for pre-cleaning, etching, ion beam assisted deposition (IBAD), and is ideal for optical coatings and thin film deposition, including metal oxides and other dielectric materials. It is one of the most widely used ion sources in the fields of modern thin film material preparation, material surface modification, VLSI and high-precision large-scale optical component microfabrication. [0003] With the continuous increase of ion source extraction cross section required by these application fields, an ion source with large area, high uniformity, and multi-gate ion beam extraction system is required. By increasing the grid, the ma...

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Problems solved by technology

[0004] As the beam spot increases, the design and processing of extraction gates for large-area and multi-gate ion sources becomes more and more difficult

Deformation control and thermal stability issues, how to prevent the installation of insulators between multiple grids from being polluted by sputtering, and affecting the long-term stable operation of the ion source need to be resolved urgently

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