InP substrate cleaning method

A substrate, volume ratio technology, applied in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., can solve the problem of difficult to remove InP debris, etc., to prevent the formation of static electricity and eliminate surface static electricity. , the effect of improving yield

Pending Publication Date: 2022-04-12
浙江光特科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is difficult to remove InP debris

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A method for cleaning an InP substrate proposed in this embodiment includes:

[0021] Soak the InP substrate in an alkaline solvent for 1 minute, and shake it during the soaking process; the alkaline solvent can be a developer;

[0022] Rinse with deionized water;

[0023] drying.

Embodiment 2

[0025] A method for cleaning an InP substrate proposed in this embodiment includes:

[0026] The InP substrate is soaked in an alkaline solvent for 0.5 minutes, and cleaned by ultrasonic vibration during the soaking process; the alkaline solvent can be a developer.

[0027] Rinse with deionized water.

[0028] Clean the InP substrate with an organic solvent; the organic solvent can be acetone, soak for 4-6 minutes, and soak for 5 minutes in this embodiment.

[0029] Rinse with deionized water.

[0030] drying.

Embodiment 3

[0032] A method for cleaning an InP substrate proposed in this embodiment includes:

[0033] The InP substrate is soaked in an alkaline solvent for 10 minutes, and cleaned by ultrasonic vibration during the soaking process; the alkaline solvent can be a glue remover.

[0034] Rinse with deionized water.

[0035] Clean the InP substrate with an organic solvent; the organic solvent can be alcohol, soak for 2-4 minutes, and soak for 3 minutes in this embodiment.

[0036] Rinse with deionized water.

[0037] drying.

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PUM

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Abstract

The invention discloses an InP substrate cleaning method, which belongs to the field of wafer processing, and comprises the following steps: soaking an InP substrate in an alkaline solvent for 0.5-10 minutes; washing with deionized water; and drying. The alkaline solvent is adopted to clean the surface, where InP chips are generated, of the surface, INP chip particles on the surface can be effectively removed, the problem that the INP chips cannot be cleaned away in a traditional cleaning mode is solved, and the yield is increased.

Description

technical field [0001] The invention relates to the technical field of InP substrate processing, in particular to an InP substrate cleaning method. Background technique [0002] In recent years, in order to meet people's requirements for information transmission, optical communication networks have gradually developed towards high-speed, all-optical networks. Semiconductor photodetectors are important receiving devices in optical communication networks, and their performance affects the operation of the entire optical communication network. InP-based detector as a semiconductor material, indium phosphide semiconductor material has a wide bandgap structure, and electrons pass through the InP material at a high speed, which means that devices made of this material can amplify higher frequencies or shorter wavelengths signal, but its material is brittle and breaks easily. After chipping, it is easy to form tiny chips, which are difficult to remove. [0003] In the Chinese pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/02B08B3/08
CPCY02P70/50
Inventor 万远涛石峰杨鲁勇
Owner 浙江光特科技有限公司
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