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Full-color display structure of silicon-based OLED (Organic Light Emitting Diode) micro display

A technology of microdisplay and full-color display, which is applied in the manufacture of electric solid-state devices, semiconductor devices, and semiconductor/solid-state devices, etc., and can solve the problem of large loss of sub-pixel brightness, low color gamut of full-color display, and color purity of monochromatic light. Low problems, to achieve the effect of reduced color film process flow, large display color gamut, and high color purity

Pending Publication Date: 2022-04-05
YUNNAN NORTH OLIGHTEK OPTO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The Fine Metal Mask (fine metal mask) control technology limited by vacuum evaporation is still difficult to achieve mass production. At present, the full-color method of OLED microdisplays is usually coated with R / G / B color film on the white OLED device structure. However, after coating R / G / B color film on white OLED devices, the light transmittance of R / G / B color film is between 20% and 40%. There is a lot of loss of pixel brightness and low light utilization rate; in addition, the dominant wavelength of R / G / B monochromatic light of this structure is determined by the color film, and the low color purity of monochromatic light will lead to a low color gamut of full-color display

Method used

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  • Full-color display structure of silicon-based OLED (Organic Light Emitting Diode) micro display

Examples

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Embodiment 1

[0022] Example 1: Taking the green sub-pixel as an example, the transparent conductive layer is made of ITO material with a thickness of 100-200 Å, and the thickness of the transparent conductive layer is adjusted so that the microcavity effect of the blue sub-pixel can selectively filter and reduce other light colors. The color subpixel will display monochrome blue light.

Embodiment 2

[0023] Example 2: Taking the green sub-pixel as an example, the transparent conductive layer is made of ITO material with a thickness of 600-700 Å, and the thickness of the transparent conductive layer is adjusted so that the microcavity effect of the green sub-pixel can selectively filter and reduce other light colors. The pixel will display a monochrome green.

Embodiment 3

[0024] Example 3: Taking the red sub-pixel as an example, the transparent conductive layer is made of IZO material with a thickness of 750-850Å, and the thickness of the transparent conductive layer is adjusted so that the microcavity effect of the red sub-pixel can selectively filter and reduce other light colors. The pixel will display monochromatic red.

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Abstract

The invention relates to a full-color display structure of a silicon-based OLED (Organic Light Emitting Diode) micro display, which is characterized in that a silicon-based back plate is adopted to manufacture a driving circuit substrate, and an anode, a hole function layer, an OLED light-emitting layer, an electronic function layer, a cathode, a sealing layer and a glass cover plate are upwards arranged on the driving circuit substrate in sequence, the OLED light-emitting layer is composed of three independent light-emitting layers, namely a blue light-emitting layer, a green light-emitting layer and a red light-emitting layer. The structure is lower in manufacturing cost, higher in color purity, larger in display color gamut, lighter and thinner in whole device, lower in power consumption and longer in service life under the condition of the same brightness.

Description

technical field [0001] The invention relates to the technical field of silicon-based OLED microdisplays, in particular to a full-color display structure of silicon-based OLED microdisplays. Background technique [0002] In silicon-based OLED microdisplay technology, the size of the display screen is required to be less than 1.5 inches, and the resolution is generally required to be full HD. Therefore, the size of the sub-pixel is required to be less than 10 μm, and the distance between the sub-pixels is also smaller. The full-color technology of silicon-based OLED microdisplays poses a big problem. [0003] The Fine Metal Mask (fine metal mask) control technology limited by vacuum evaporation is still difficult to achieve mass production. At present, the full-color method of OLED microdisplays is usually coated with R / G / B color film on the white OLED device structure. However, after coating R / G / B color film on white OLED devices, the light transmittance of R / G / B color film ...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/50H01L27/32
Inventor 王体炉段瑜钱福丽杨启鸣苟国汝
Owner YUNNAN NORTH OLIGHTEK OPTO ELECTRONICS TECH
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