Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Double-cavity system and equipment for chemical vapor deposition diamond

A chemical vapor deposition, diamond technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as introduction, and achieve the effect of avoiding jamming and preventing deviation

Pending Publication Date: 2022-04-05
深圳优普莱等离子体技术有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the technical defect in the prior art that when opening and closing the hatch door of the reaction chamber multiple times to remove lattice defects, the reaction chamber is prompted to introduce impurity gases such as water vapor in the air, in order to realize the production of high-quality diamond growth, the invention provides a dual chamber system and equipment for chemical vapor deposition of diamond

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double-cavity system and equipment for chemical vapor deposition diamond
  • Double-cavity system and equipment for chemical vapor deposition diamond
  • Double-cavity system and equipment for chemical vapor deposition diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] It should be noted that, in the case of no conflict, the embodiments in the present application and related technical features in the embodiments can be combined with each other. It should be pointed out that the following detailed description is intended to provide further explanation to the application, and unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the application belongs.

[0027] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. It should be understood that when the terms "comprises" and / or "comprises" are used in this specification, they indicate the presence of features, steps, operations, means, components and / or combinations thereof.

[0028] The present invention will be described in detail belo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a double-cavity system and equipment for chemical vapor deposition diamond, which comprises a first cavity, a second cavity, a vacuum gate valve and a material transportation mechanism, the vacuum gate valve is fixedly connected with one end of the second cavity and the first cavity, and the material transportation mechanism is connected with the other end of the second cavity. And the material conveying mechanism can telescopically move in the first cavity and the second cavity. According to the double-cavity system for the chemical vapor deposition diamond, the technical defect that in the prior art, when a cabin door of the reaction cavity is opened and closed for multiple times to conduct lattice defect removal operation, water vapor and other impurity gases in air are promoted to be introduced into the reaction cavity can be overcome, and growth of the high-quality diamond is achieved.

Description

technical field [0001] The invention belongs to the technical field of diamond growth, and in particular relates to a dual-chamber system for chemical vapor deposition of diamond and equipment including the dual-chamber system for chemical vapor deposition of diamond. Background technique [0002] This section provides background information related to the present application only and is not necessarily prior art. [0003] In the process of diamond growth by chemical vapor deposition, the reaction chamber needs to be evacuated first, and then the reaction gas is introduced. Under the action of the electromagnetic field generated by microwaves, the electrons in the chamber collide with each other and produce violent oscillations, which promote The collision between other atoms, groups and molecules in the reaction chamber is prevented, so that the chamber is filled with supersaturated atomic hydrogen and carbon-containing groups, and these groups are constantly adsorbing, des...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/54
Inventor 蒋礼全峰顾亚骏
Owner 深圳优普莱等离子体技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products