High-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and preparation process of high-density silicon carbide brick

A high-temperature oxidation-resistant silicon carbide brick technology, applied in the field of high-temperature refractory materials, can solve problems such as the inability to solve the problem of long-term temperature resistance of silicon oxide, and achieve high-temperature service performance, good wear resistance, and high strength.

Pending Publication Date: 2022-04-05
宜兴瑞泰耐火材料工程有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main technical problem in improving the performance of silicon carbide refractory bricks is to solve the problem of the persistence of the oxide film on the surface of silicon carbide under high temperature service conditions. However, the existing technology is designed from the diffusion law of silicon dioxide film and silicon carbide, but it has not been able to To solve the problem of permanent temperature resistance of silicon oxide, it is impossible to obtain permanent oxidation resistance of silicon carbide

Method used

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  • High-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and preparation process of high-density silicon carbide brick
  • High-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and preparation process of high-density silicon carbide brick
  • High-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and preparation process of high-density silicon carbide brick

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] High-density silicon carbide bricks with high-temperature oxidation resistance and corrosion resistance, the formula is calculated in parts by weight:

[0038] (1) Silicon carbide with a particle size of 5-3 mm, 10 parts;

[0039] (2) Silicon carbide with a particle size of 3-1 mm, 35 parts;

[0040] (3) Silicon carbide with a particle size of 1-0 mm, 30 parts;

[0041] (4) Silicon carbide with a particle size of 0.088-0.045 mm, 25 parts;

[0042] (5) Bentonite with particle size ≤0.045mm, 2 parts;

[0043] (6) bimodal alumina micropowder, 5 parts;

[0044] (7) Antioxidant (molar ratio of aluminum powder and nano silicon powder is 5:1), 1 part;

[0045] (8) silane coupling agent, 5 parts;

[0046] The particle size distribution characteristic of described bimodal aluminum oxide is: D 50 = 0.9 μm; D 90 = 2.5μm

[0047] The preparation process is as follows:

[0048] (1) Measure and prepare raw materials respectively according to the above formula;

[0049] (2) ...

Embodiment 2

[0055] High-density silicon carbide bricks with high-temperature oxidation resistance and corrosion resistance, the formula is calculated in parts by weight:

[0056] (1) Silicon carbide with a particle size of 5-3 mm, 15 parts;

[0057] (2) Silicon carbide with a particle size of 3-1 mm, 30 parts;

[0058] (3) Silicon carbide with a particle size of 1-0 mm, 25 parts;

[0059] (4) Silicon carbide with a particle size of 0.088-0.045 mm, 23 parts;

[0060] (5) Bentonite with particle size ≤ 0.045mm, 1.5 parts;

[0061] (6) bimodal alumina micropowder, 3 parts;

[0062] (7) Antioxidant (molar ratio of aluminum powder and nano silicon powder is 7:1), 3 parts;

[0063] (8) silane coupling agent, 3 parts;

[0064] The particle size distribution characteristic of described bimodal aluminum oxide is: D 50 = 0.7 μm; D 90 = 1.8μm

[0065] The preparation process of the high-temperature oxidation-resistant and corrosion-resistant high-density silicon carbide brick of the present ...

Embodiment 3

[0073] High-density silicon carbide bricks with high-temperature oxidation resistance and corrosion resistance, the formula is calculated in parts by weight:

[0074] (1) Silicon carbide with a particle size of 5-3 mm, 20 parts;

[0075] (2) Silicon carbide with a particle size of 3-1mm, 25 parts;

[0076] (3) Silicon carbide with a particle size of 1-0 mm, 20 parts;

[0077] (4) Silicon carbide with a particle size of 0.088-0.045 mm, 20 parts;

[0078] (5) Bentonite with particle size ≤0.045mm, 1 part;

[0079] (6) Bimodal alumina micropowder, 1 part;

[0080] (7) antioxidant (aluminum powder and nano-silicon powder molar ratio 10:1), 5 parts;

[0081] (8) silane coupling agent, 1 part;

[0082] The particle size distribution characteristic of described bimodal aluminum oxide is: D 50 = 0.5 μm; D 90 = 1.3μm

[0083] The preparation process of the high-temperature oxidation-resistant and corrosion-resistant high-density silicon carbide brick of the present invention is...

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Abstract

The invention relates to a high-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and a preparation process of the high-density silicon carbide brick. Silicon carbide, bentonite, bimodal alumina micro powder, an antioxidant and an additive are used as raw materials, and are sintered after being mixed, ground and formed. The prepared silicon carbide brick can be used for 2-3 years at the use temperature of 1500 DEG C, and is superior to the limitation that the use temperature of a common silicon carbide brick cannot exceed 1350 DEG C.

Description

technical field [0001] The invention relates to the technical field of high-temperature refractory materials, in particular to a high-density silicon carbide brick with high-temperature oxidation resistance and corrosion resistance and a preparation process thereof. Background technique [0002] Silicon carbide is an important non-oxide refractory material due to its excellent high-temperature wear resistance, corrosion resistance, thermal shock resistance and high thermal conductivity, and is used in high-temperature furnaces, but silicon carbide can be used in high-temperature oxidation conditions Oxidation will inevitably occur, restricting its high temperature application range. Although the oxidation product of silicon carbide is silicon dioxide, the formation of a protective film by silicon dioxide can inhibit further oxidation, but at 1100 ° C, the silicon oxide film layer coated on silicon carbide will produce a volume effect due to phase change, making the coating ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/567C04B35/622
Inventor 陈松林俞小平俞盛魏瀚张林吴跃峰钱志豪钱军峰
Owner 宜兴瑞泰耐火材料工程有限公司
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