Preparation of solar energy photovoltaic material-carbon film

Abstract

During sputtering to deposit carbon film, carbon source target material is high-purity graphite in 99.999% purity, argon with probably hydrogen for hydrogenation is used as sputtering gas source, the sputtering pressure is 0.05-10 Pa, and some gas depant may be used.

Description

technical field [0001] The invention mainly relates to a method for making a solar photovoltaic material carbon thin film. It belongs to the field of semiconductor materials. Background technique [0002] At present, the peak value of the spectral response of the commonly used silicon single crystal solar cells is located at 0.7-0.8 μm, while the peak value of the solar spectrum is 0.4-0.5 μm. There is still a mismatch problem due to the intrinsic energy gap width of these materials that determines their peak response. Gallium arsenide batteries are also accompanied by toxic and polluting gas emissions during the production process, which damages the ecological environment. In 1996, D.C.Ingram of the United States applied for a patent (US.Patent.No.5,055,421): "amorphous hydrogenated carbon thin film photovoltaic cell", but only mentioned the hydrogenated carbon film of the amorphous network, in the amorphous silicon film , the role of hydrogenation is to passivate the va...

AI Technical Summary

Problems solved by technology

Hydrogenated amorphous carbon has high resistivity and is not suitable for solar photovoltaic materials