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Ultralow temperature preparation method of TMO film and TMO-TFT

A TMO-TFT, ultra-low temperature technology, applied in the field of ions, can solve the problems that limit the application of traditional solution methods, and achieve excellent electrical properties, improved compatibility, and good semiconductor properties.

Pending Publication Date: 2022-03-01
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the traditional solution method usually requires a high-temperature annealing process of >400 °C to realize the effective activation of TMO-TFT, which is higher than the tolerance temperature of most flexible substrates, thus limiting the application of the traditional solution method in flexible display technology.

Method used

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  • Ultralow temperature preparation method of TMO film and TMO-TFT
  • Ultralow temperature preparation method of TMO film and TMO-TFT
  • Ultralow temperature preparation method of TMO film and TMO-TFT

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Effect test

Embodiment 1

[0071] The substrate in the present embodiment selects commercially purchased single-sided polishing p ++ Thermally oxidized silicon wafers, wherein the thickness of thermally oxidized silicon is 100nm; hydrated indium nitrate was purchased from Sigma-Aldrich; the ultrapure water was self-made 18.2MΩ deionized water. Concrete preparation process is as follows:

[0072] Step 1: Preparation of In 2 o 3 Precursor:

[0073] Firstly, hydrated indium nitrate was dissolved in deionized water with a concentration of 0.2 mol / L, and then magnetically stirred at room temperature for 6 hours to obtain colorless and transparent In 2 o 3 Precursor solution, stand for later use;

[0074] Step 2: Substrate cleaning:

[0075] First prepare the p ++ Thermally oxidized silicon wafers were ultrasonically cleaned in deionized water, acetone, isopropanol, and deionized water for 10 min each, and then dried with nitrogen;

[0076] Step 3: Substrate Surface Activation:

[0077] The cleaned p...

Embodiment 2

[0102] Material selection and steps 1-3 are with embodiment 1;

[0103] Step 4: Prepare In 2 o 3 film:

[0104] First, use a 0.22 μL water-based filter head to filter In 2 o 3 Precursor solution to remove insoluble impurities in the solution; then filter the filtered In in an environment with a relative humidity of less than 25% 2 o 3 The precursor solution is added dropwise to the p ++ Thermally oxidized silicon wafers were spin-coated at a speed of 4500 rpm for 30 seconds to obtain In 2 o 3 Wet film; finally In 2 o 3 The wet film was placed on a heating plate and pre-annealed at 45 °C for 10 min in the atmosphere to obtain pre-annealed In 2 o 3 film;

[0105] Step 5: N 2 Plasma treatment pre-annealed In 2 o 3 film:

[0106] Such as Figure 4 As shown, the pre-annealed In obtained in step 4 2 o 3 The film was placed in a plasma treatment device for N 2 Plasma treatment for 30 minutes, wherein the control plasma treatment temperature is 45°C, the plasma tre...

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Abstract

The invention provides an ultralow temperature preparation method of a TMO thin film and a TMO-TFT. The ultralow-temperature preparation method comprises the following steps: S1, preparing a TMO precursor solution; s2, cleaning a substrate and activating the surface of the substrate; s3, preparation of a pre-deposited TMO wet film; s4, pre-annealing is conducted on the pre-deposited TMO wet film obtained in the S3, and a pre-annealed TMO thin film is obtained; s5, carrying out N2 plasma treatment or N2 plasma treatment and post-annealing on the pre-annealed TMO thin film obtained in S4 to obtain a TMO thin film; and S6, preparing a TFT by taking the TMO thin film obtained in the step S5 as an active layer, and obtaining the TMO-TFT. The TMO thin film and the TMO-TFT are prepared at the ultralow temperature while it is guaranteed that the TMO thin film has the good semiconductor characteristic and the TMO-TFT shows the excellent electrical characteristic, and therefore the compatibility of the TMO-TFT and the flexible substrate is enhanced.

Description

【Technical field】 [0001] The invention relates to the fields of semiconductor technology and plasma technology, in particular to an ultra-low temperature preparation method of TMO film and TMO-TFT. 【Background technique】 [0002] The in-depth development of the information age and the application of artificial intelligence have opened up the intelligent era of the Internet of Everything and promoted the rapid development of intelligent terminals. As the main "window" of smart terminals for human-computer interaction, the display screen is the key to consumers' sensory experience. With the development of smart cities and consumers' pursuit of an intelligent and better life, the functions of terminal devices such as smart phones, smart TVs, computers, smart large screens, smart cars, and smart homes have become increasingly powerful, making terminal devices more important to processors. While putting forward higher requirements for chips, in order to meet consumers' better se...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/66742H01L29/78603
Inventor 栗旭阳弥谦梁海峰蔡长龙潘永强徐均琪
Owner XIAN TECHNOLOGICAL UNIV
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