Design method of antenna of electric field sensor and electric field sensor

Abstract

The invention discloses a design method of an antenna of an electric field sensor and the electric field sensor, and the method comprises the steps: arranging an electrode and an antenna at the two sides of a straight waveguide formed after titanium diffusion of a lithium niobate wafer of the electric field sensor, and then calculating and determining the size parameters of the electrode and the antenna. According to the design method, the measurement requirement of the electric field sensor is considered, the realizability of the technology is considered, the integrated optical electric field sensor is designed through the method, the temperature stability of the electric field sensor is improved, and meanwhile, it can be ensured that the measuring sensitivity, reliability and measurable range of the electric field sensor meet actual measuring requirements.

Description

technical field [0001] The invention belongs to the field of integrated optical electric field sensors, in particular to a design method of an integrated optical electric field sensor antenna and an electric field sensor. Background technique [0002] With the continuous maturity of integrated optical processing technology, with the characteristics of small size, wide frequency band and strong anti-electromagnetic interference ability, integrated optical electric field sensor can be used in long air gap discharge, substation transient voltage monitoring, and gas insulated switch (GIS). Transient voltage measurement and other fields play an important role. [0003] Some of these application scenarios are under laboratory conditions, and the temperature is relatively stable; while some application scenarios are outdoors, such as substation transient voltage monitoring, where the ambient temperature changes greatly. For this reason, the integrated optical electric field sensor ...

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Problems solved by technology

[0004] For lithium niobate (LiNbO3), which has the most mature integrated optical processing technology, the electric field sensor can be designed and produced by using the X-cut Z-pass method. Compared with the X-cut Y-pass method, the temperature stability of this method can be improved by 4 theoretically. order of magnitude, but at this time, the LiNbO3 crystal is used, which is the smaller of several electro-optic coefficients, and the sensitivity of the electric field sensor is greatly limited.

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