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Manufacturing method of N-type battery boron expansion SE structure

A manufacturing method and N-type technology, applied in the field of solar cells, can solve problems such as difficulty in realization, and achieve the effects of improving conversion efficiency, improving open circuit voltage, and improving fill factor

Pending Publication Date: 2022-01-18
普乐新能源科技(泰兴)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to achieve on N-type batteries due to the small boron atoms

Method used

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  • Manufacturing method of N-type battery boron expansion SE structure

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Embodiment 1

[0037] A method for manufacturing an N-type battery boron-enhanced SE (selective emitter, referred to as SE) structure, comprising the following steps:

[0038] (1) Insert the N-type silicon chip after cleaning and making texture vertically or horizontally into the quartz crystal boat of the low-pressure diffusion furnace, and put it into the furnace tube; The surface produces a pyramid-like structure. In this embodiment, the conventional steps in the prior art are used for the washing and making of texture, and no improvement is made in this application.

[0039] (2) After heating up to a diffusion temperature of 880°C and stabilizing for 3 minutes, perform vacuuming and leak detection steps;

[0040] (3) The temperature is kept at the diffusion temperature of 880°C, nitrogen and oxygen are introduced at a constant pressure of 100mbar, the flow of nitrogen is controlled at 2000sccm, the flow of oxygen is controlled at 500sccm, and the time is 5min, a thin layer of silicon ox...

Embodiment 2

[0052] A method for manufacturing an N-type battery boron-enhanced SE (selective emitter, referred to as SE) structure, comprising the following steps:

[0053] (1) Insert the N-type silicon chip after cleaning and making texture vertically or horizontally into the quartz crystal boat of the low-pressure diffusion furnace, and put it into the furnace tube; The surface produces a pyramid-like structure. In this embodiment, the conventional steps in the prior art are used for the washing and making of texture, and no improvement is made in this application.

[0054] (2) After heating up to a diffusion temperature of 900°C and stabilizing for 2 minutes, perform vacuuming and leak detection steps;

[0055] (3) The temperature is kept at the diffusion temperature of 900°C, nitrogen and oxygen are introduced at a constant pressure of 120mbar, the flow of nitrogen is controlled at 2000sccm, the flow of oxygen is controlled at 700sccm, and the time is 3min, a thin layer of silicon ox...

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Abstract

The invention provides a manufacturing method of an N-type battery boron diffusion SE structure. A method of manufacturing a lightly doped region by high-temperature diffusion and manufacturing a heavily doped region by matching with laser slotting and boron paste printing is adopted to form the N-type battery boron diffusion SE structure. Due to the fact that laser slotting and boron paste printing patterns of the heavily-doped area are consistent with silk-screen printing patterns, the cell front face structure enables the non-printing area to be lightly-doped high-sheet-resistance, short-wave response of light rays is improved, meanwhile, the silk-screen printing area is heavily-doped low-sheet-resistance, and contact resistance of a front metal electrode is reduced, so the short-circuit current, the open-circuit voltage and the fill factor are well improved, and the conversion efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for manufacturing a boron-expanded SE structure of an N-type cell. Background technique [0002] Compared with P-type crystalline silicon cells, N-type crystalline silicon cells have a higher minority carrier life, no light-induced attenuation, good weak light effect, and small temperature coefficient, which is the hope for crystalline silicon solar cells to move towards the highest theoretical efficiency. TOPCon is a Tunnel Oxide Passivated Contact solar cell technology based on the principle of selective carriers. Its cell structure is an N-type silicon substrate cell, and a layer of ultra-thin silicon oxide is prepared on the back of the cell. , and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reducing surface recombination and metal contact recombination. [0003] But the metal-induced r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/223H01L31/18
CPCH01L31/1804H01L21/223Y02E10/547Y02P70/50
Inventor 欧文凯向亮睿
Owner 普乐新能源科技(泰兴)有限公司
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