SOT-MRAM-based read-write method, read-write circuit and SOT-MRAM

Abstract

The invention provides a SOT-MRAM-based read-write method, a read-write circuit and the SOT-MRAM. The read-write method comprises the following steps of: introducing a write current into an SOT layer to turn over the magnetization direction of a free layer in a magnetic tunnel junction, so that the magnetization directions of the free layer and a reference layer are in a parallel state or an anti-parallel state; reading a capacitance value of the magnetic tunnel junction; and judging whether the magnetic tunnel junction is in a first state or a second state according to the capacitance value of the magnetic tunnel junction. The capacitance value of the magnetic tunnel junction is read, whether the magnetic tunnel junction is in the first state or the second state is judged according to the capacitance value of the magnetic tunnel junction, and data 0 and 1 in the storage unit are recognized and read. The magnetic capacitance type SOT-MRAM is adopted, the requirements for the growth condition and material selection of the MTJ and the sensitivity of a reading circuit are low compared with those of a resistance type SOT-MRAM, the growth condition and material selection of the magnetic tunnel junction by the magnetic capacitance type SOT-MRAM are not harsh as those of the magnetic resistance type SOT-MRAM, and the difficulty of manufacturing and reading the SOT-MRAM is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a SOT-MRAM-based read-write method, a read-write circuit and the SOT-MRAM. Background technique [0002] Magnetic random access memory (MRAM) is one of the most promising storage technologies in the new memory, and it is expected to replace dynamic random access memory (DRAM) and static random access memory (SRAM). MRAM is divided into STT type and SOT type according to the different writing methods. Among them, the core structure of the SOT-MRAM is a magnetic tunnel junction (MTJ) structure and an SOT layer adjacent to the free layer of the MTJ. The MTJ consists of a sandwich structure consisting of two ferromagnetic layers and a tunneling layer. Among the two ferromagnetic layers, the magnetization of one layer can be flipped by current or magnetic field, which is called the free layer; the magnetization of the other layer remains unchanged, which is called the referen...

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Problems solved by technology

[0003] The invention provides a read-write method, read-write circuit and SOT-MRAM based on SOT-MRAM, to reduce the difficulty of manufacturing and reading SOT-MRAM, and solve the problem of resistive SOT-MRAM due to harsh preparation conditions and complicated preparation process. The problem of not being able to mass-produce SOT-MRAM

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