Low-leakage amplifier biasing circuit

Abstract

A low-leakage amplifier bias circuit comprises a common-source bias circuit and a plurality of common-gate bias circuits; the common-source bias circuit provides common-source bias voltage for a common-source transistor of an amplifier, and the common-gate bias circuits provide common-source bias voltage for a common-source transistor of the amplifier; the common-gate bias circuit provides bias voltage for a common-gate transistor of the amplifier; when the amplifier is in a turn-off state, the common source bias circuit pulls down the common source bias voltage to the ground, and the common gate bias circuit pulls down the bias voltage to turn-off voltage; when the amplifier is in a turn-off and turn-on state, the common-source bias circuit disconnects the common-source bias voltage from the ground, and the common-gate bias circuit pulls the bias voltage to turn-on gate voltage. According to the low-leakage amplifier biasing circuit, the grid voltage of the common-gate transistor of the amplifier is lowered, so that the drain voltage of the common-source transistor is lowered, the leakage current is controlled to the maximum extent, and the static power consumption of the amplifier is lowered.

Description

technical field [0001] The present invention relates to an amplifier, in particular to an amplifier bias circuit. Background technique [0002] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a field-effect transistor (field-effect transistor) that can be widely used in analog circuits and digital circuits, including CMOS, SOI, GaN , BJT, etc. [0003] For MOSFET transistors, when both the drain and source are grounded, as the gate voltage VG increases, electrons are attracted by the positive electricity on the gate, forming a depletion layer between the drain and source. At this time The MOSFET is in the off state; as the gate voltage increases, more electrons are attracted to the surface of the gate oxide layer, forming a conduction channel between the drain and the source. current. But when the drain voltage is not 0, even if VG=0, it does not mean that there is no current generation in the MOSFET. Since the PN junction is formed between the drain N regi...

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Problems solved by technology

[0006] figure 2 It is the common source bias circuit diagram of the existing MOSFET transistor RF amplifier, such as figure 2 As shown, when the gate terminal of the MOSFET is pulled down to the ground, if there is still a voltage Vd at the drain terminal, the transistor still has the reverse saturation current of the drain stage, that is, the leakage current, which is related to Vd, and the trend is as follows image 3 As shown, as Vd increases, the leakage current Id increases when the transistor is turned off, which increases the static power consumption of the RF amplifier of the MOSFET transistor

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