Memory fault processing method and device, equipment and storage medium

A processing method and memory technology, applied in the computer field, can solve problems such as equipment downtime, business impact, and business impact, and achieve the effect of preventing downtime and reducing business impact

Pending Publication Date: 2021-12-21
HUAWEI TECH CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in related technologies, it is necessary to start hPPR to replace the faulty row after the device is cold reset, which will affect the business. If the memory fault is serious during the operation of the device and has not been repaired, it will cause the device to go down Affect business

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory fault processing method and device, equipment and storage medium
  • Memory fault processing method and device, equipment and storage medium
  • Memory fault processing method and device, equipment and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0092] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the following will further describe the embodiments of the present application in detail in conjunction with the accompanying drawings.

[0093] figure 1 It is a flow chart of a method for processing a memory fault provided by an embodiment of the present application, and the method is applied to a computer device. Please refer to figure 1 , the method includes the following steps.

[0094] Step 101: Start the fault analysis of the memory at the first moment, and the fault analysis includes: obtaining the current fault analysis result of the memory by analyzing historical fault information.

[0095] In the embodiment of the present application, a basic storage unit of a memory (such as a dynamic random access memory (DRAM) DRAM) is usually composed of a transistor and a capacitor, and the amount of charge carried on the capacitor determines whether t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention discloses a memory fault processing method and device, equipment and a storage medium, and belongs to the technical field of computers. In the embodiment of the invention, the fault analysis result is obtained by analyzing the historical fault information, and then the fault of the memory is repaired according to the fault analysis result, so that the memory fault can be analyzed more accurately. In addition, according to the scheme, memory fault repair can be started without cold reset, that is, memory faults can be repaired in time, system downtime is prevented, and service influences are reduced.

Description

[0001] This application claims the priority of the Chinese patent application with the application number 202010569797.2 and the title of the invention "A Method for Handling Memory Faults" filed on June 20, 2020, the entire contents of which are incorporated by reference in this application. technical field [0002] The embodiments of the present application relate to the technical field of computers, and in particular, to a memory fault processing method, device, device, and storage medium. Background technique [0003] Memory is one of the important components of a device. Typically, memory consists of multiple banks (also known as memory matrices), and each bank contains multiple rows of memory. During the use of memory, failures often occur due to various reasons, and the proportion of memory failures caused by memory row failures is very high. Therefore, the repair of memory row failures can be used as an important repair method for memory failures. [0004] In a rela...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F11/07
CPCG06F11/073G06F11/079G06F11/0793G11C29/24G11C29/48G11C29/76G06F11/1048G11C29/1201G11C29/38G11C29/4401G11C29/78
Inventor 乔光毅刁阳彬马剑涛
Owner HUAWEI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products