Crucible lifting and rotating mechanism special for silicon carbide furnace

Abstract

The invention relates to the field of semiconductor equipment, in particular to a crucible lifting and rotating mechanism special for a silicon carbide furnace. The mechanism comprises a lifting mechanism, a rotating mechanism is installed on a lifting sliding table of the lifting mechanism, the rotating mechanism comprises a rotating shaft, and the rotating shaft is rotationally connected with the lifting sliding table through a magnetofluid rotary sealing piece; the periphery of the magnetofluid rotary sealing piece is connected with the lower end of a corrugated pipe device; the upper end of the corrugated pipe device is a corrugated pipe upper flange for connecting a silicon carbide furnace bottom cavity; the lower end of the rotating shaft is rotationally connected with a rotating joint which is provided with a water inlet and a water outlet; and a cooling loop is arranged in the rotating shaft, one end of the cooling loop is communicated with the water inlet, and the other end of the cooling loop is communicated with the water outlet. The magnetofluid rotary sealing piece is additionally arranged, so that the rotating effect and the high-vacuum sealing effect are achieved. High sealing performance between the rotating position and a silicon carbide furnace inner cavity is conveniently achieved, then the high vacuum degree of the silicon carbide furnace inner cavity can be guaranteed, and the mechanism is suitable for processing and production of third-generation semiconductor materials.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a lifting and rotating mechanism. Background technique [0002] The crucible lifting and rotating device is one of the core transmission components of the silicon carbide furnace. [0003] With the vigorous development of the semiconductor industry, semiconductor materials have evolved from the first generation to the current third generation. The representative silicon of the first-generation semiconductor material has a power of about 100W, but the frequency is only about 3GHz; the second-generation representative gallium arsenide has a power of less than 100W, but the frequency can reach 100GHz. Therefore, the first two generations of semiconductor materials are more complementary to each other. Gallium nitride and silicon carbide, the representatives of the third-generation semiconductor, can have a power of more than 1000W and a frequency close to 100GHz. The advanta...

AI Technical Summary

Problems solved by technology

[0004] With the change of semiconductor materials, if the traditional crucible lifting and rotating device is still used, it is not conducive to ensuring the improvement of the quality of single crystal pulling

At present, there is a lack of a crucible lifting and rotating device for silicon carbide, which is suitable for the third generation of semiconductor materials.

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