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Mini LED backlight source, backlight module and manufacturing method of Mini LED backlight source

A technology of backlight and LED chips, which is applied in the fields of optics, nonlinear optics, semiconductor/solid-state device manufacturing, etc., can solve the problems of small size, large number of chips, and great influence of module effect, so as to increase the light-emitting angle and change the space Distributing and improving the effect of uniformity

Pending Publication Date: 2021-11-30
APT ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The light-emitting angle of the point light source LED can be increased through the structure of the encapsulation layer. However, because of the large number of COB Mini LEDs and small size, it is difficult to ensure the consistency of its structure, which will eventually have a great impact on the module effect. How to ensure the COB Mini LED The consistency of LED packaging layer structure is a problem that needs to be solved at present

Method used

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  • Mini LED backlight source, backlight module and manufacturing method of Mini LED backlight source
  • Mini LED backlight source, backlight module and manufacturing method of Mini LED backlight source
  • Mini LED backlight source, backlight module and manufacturing method of Mini LED backlight source

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Embodiment 1

[0029] This embodiment discloses a Mini LED backlight; including:

[0030] Substrate 100, the material of substrate in this example is FR4 plate, and substrate surface has a plurality of welding areas (single welding area such as 102 / 1021), is provided with one deck light-reflecting layer 101 to cover outside welding area, and in this embodiment, reflective The material of the layer is a mixture of silicone resin and TiO2.

[0031] The surface of the reflective layer on the side away from the substrate (that is, the side of the reflective layer combined with the encapsulation layer) has a microstructure of 50 um.

[0032] The flip-chip LED chip 104, the size of the flip-chip LED chip in this embodiment is 200um*400um, the dominant wavelength is 450nm, and the bottom of each flip-chip LED chip has a first electrode and a second electrode. The flip-chip LED chip is arranged above the soldering area of ​​the substrate.

[0033] A plurality of metal connection layers 103 / 1031, w...

Embodiment 2

[0039] This embodiment discloses a Mini LED backlight. The difference between it and Embodiment 1 is that the material of the substrate is a BT board, and there are two reflective layers in total. The reflective layer in contact with the substrate is an epoxy resin reflective layer. The surface of the resin reflective layer covers the second reflective layer, the second reflective layer is a silicon rubber reflective layer, and there is a 30um microstructure on the surface of the second reflective layer away from the substrate, the size of the chip in this embodiment is 100*200um, A light-reflecting layer structure 108 is covered on the light-emitting surface of the chip. In this embodiment, the arrangement of the chips on the substrate is a polygonal arrangement ( Figure 5 right). In this embodiment, a is 0.1 mm, b is 0.01 mm, b / 2a=0.05; in this embodiment, the material of the encapsulation layer is silicone rubber.

[0040] The preparation method of the Mini LED backlight ...

Embodiment 3

[0042] This embodiment discloses a Mini LED backlight. The difference between it and Embodiment 1 is that in this embodiment, the material of the encapsulation layer is epoxy resin, and the encapsulation layer also contains nanoparticles. In this embodiment, the nanoparticles are SiO2, a is 0.5mm, b is 0.5mm, b / 2a=0.5.

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Abstract

The invention provides a Mini LED backlight source. The Mini LED backlight source comprises at least one substrate, wherein a plurality of welding areas are arranged on the surface of the substrate, and a light reflecting layer is arranged on the portion outside the welding areas. at least one flip LED chip, wherein afirst electrode and a second electrode are arranged at the bottom of the flip LED chip, and the flip LED chip is arranged on the welding area of the substrate; a plurality of metal connecting layers which are used for connecting the electrodes of the flip LED chips and the welding area of the substrate, and are arranged between the substrate and the flip LED chips; a packaging layer which covers the LED flip chips, the welding area of the substrate, the metal connecting layer and a part of the reflective layer around the flip LED chip; at least one IC driver and at least one component; and a microstructure on the surfacecombined with the packaging layerof the reflective layer. The invention further provides a Mini LED backlight module and a preparation method of the Mini LED backlight source. The LED device increases light emitting of the side face of the LED through light refraction, the light emitting angle of the light source is increased, and the light emitting effect is improved.

Description

technical field [0001] The invention belongs to the technical field of LED displays, and in particular relates to a Mini LED backlight source, a Mini LED backlight module and a manufacturing method thereof. Background technique [0002] Due to the high contrast and excellent display effect of LED backlight dynamic dimming technology, it has gradually become the new favorite of LED related products in the market. Dynamic dimming requires multiple partitions to control multiple light sources, which leads to a sharp increase in product costs and makes the terminal extremely expensive. By increasing the light angle of a single backlight source, the number of LEDs can be reduced so that the cost of the terminal can be greatly reduced. [0003] Mini LED refers to a new backlight technology with a chip size of 100 microns. COB (Chip On Board) is a structure of Mini LED. COB Mini LED has become a research hotspot because of its advantages of high contrast and high brightness. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/58H01L33/60H01L33/54H01L25/16H01L21/50G02F1/13357G09F9/30
CPCH01L33/58H01L33/60H01L33/54H01L25/167H01L21/50G02F1/133603G02F1/133605G09F9/30H01L2933/0033
Inventor 姚述光曾照明万垂铭肖国伟谢超英区伟能侯宇
Owner APT ELECTRONICS
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