Base supporting frame, device and method for epitaxial growth of silicon wafer

Abstract

The embodiment of the invention discloses a base supporting frame, a device and a method for epitaxial growth of a silicon wafer. The base supporting frame comprises: four base supporting arms, which extend outwards in a radial direction and extend upwards in an axial direction from the longitudinal axis of the base supporting frame, wherein the four base supporting arms are evenly distributed in a circumferential direction around the longitudinal axis, and the far end parts of the four base supporting arms support a base used for bearing the silicon wafer together; and four concave lenses, which are respectively connected to the four base supporting arms, wherein each concave lens extends along the connected base supporting arm, the four concave lenses are arranged in a manner that four <110> crystal orientations corresponding to the silicon wafer borne in the base are respectively aligned with the four base supporting arms in a vertical direction, and radiant heat radiated to four <110> crystal orientation positions of the silicon wafer through the four concave lenses in a vertical direction can be refracted and diffused by the four concave lenses.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of epitaxial growth of silicon wafers, and in particular to a base supporting frame, device and method for epitaxial growth of silicon wafers. Background technique [0002] The epitaxial growth process of silicon wafers is an important process in the semiconductor chip manufacturing process. This process refers to growing a layer of crystal-free primary particles (Crystal Originated Particles, COP) defect and oxygen-free precipitated silicon single crystal layer. Epitaxial growth of silicon wafers mainly includes growth methods such as vacuum epitaxial deposition, vapor phase epitaxial deposition, and liquid phase epitaxial deposition, among which vapor phase epitaxial deposition is the most widely used. If not otherwise stated, the epitaxial growth mentioned in the present invention refers to the epitaxial growth accomplished by vapor phase epitaxial deposition. [0003] For the epit...

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Problems solved by technology

[0008] In view of this, the embodiment of the present invention expects to provide a base support frame, device and method for epitaxial growth of silicon wafers; by changing the structure of the corresponding part of the base support frame, the temperature distribution of the corresponding part of the silicon wafer can be changed to Solve the problem that the thickness of the epitaxial layer is not uniform during the epitaxial growth process caused by the different crystal orientation of the silicon wafer, which leads to the problem of poor flatness of the epitaxial silicon wafer

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