Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Batch processing type ion implantation method

An ion implantation and ion implanter technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of many mechanical movements, increased process time, and increased particle risk, so as to reduce ion implantation time and improve The effect of particle defects, increasing the risk of product defects

Pending Publication Date: 2021-10-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Excessive injection interruptions will lead to 2 problems: 1. Interruptions lead to increased process time and affect production capacity; 2. Too many interruptions lead to excessive mechanical movements of Faraday components, increasing the risk of particles

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Batch processing type ion implantation method
  • Batch processing type ion implantation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0022] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a batch processing type ion implantation method, and relates to the field of semiconductor manufacturing. The method comprises the following steps: a wafer is transferred into a process cavity of a batch ion implanter, wherein the surface of the wafer is coated with photoresist; first-step ion implantation is carried out on the wafer, so that the photoresist releases gas and the air pressure in the process cavity is within a preset range; when the air pressure in the process cavity of the batch ion implanter meets the air pressure stable condition, second-step ion implantation is carried out on the wafer; and the beam during the first-step ion implantation is smaller than the beam during the second-step ion implantation, the implantation dose during the first-step ion implantation is smaller than the implantation dose during the second-step ion implantation, and the sum of the implantation dose during the first-step ion implantation and the implantation dose during the second-step ion implantation is equal to the target dose. The problems that multiple injection interruptions are prone to occurring during single-channel injection of an existing batch processing ion injection machine, the productivity is affected, and the product defect risk is increased are solved. The effects of reducing ion implantation time and improving particle defects are achieved.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a batch ion implantation method. Background technique [0002] The ion implantation process is one of the key processes in semiconductor manufacturing, and the ion implantation is performed on an ion implanter. The ion implantation process must be completed within the specified vacuum range. When the vacuum in the implantation process chamber exceeds the specified range, the ion implanter will stop the process, and continue the process after the vacuum in the implantation process chamber returns to the specified range. The wafer with photoresist will generate and release a large amount of gas in the early stage of ion implantation, which makes the vacuum of the implantation process chamber exceed the specified range. [0003] The batch-processing ion implanter can process multiple wafers in each batch, such as 13 wafers (8-inch GSD series), and the wafer with...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265
CPCH01L21/265
Inventor 施志明李文军孙建军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com