Homoepitaxial beta-Ga2O3 film and preparation method thereof

Abstract

The invention discloses a homoepitaxial beta-Ga2O3 film and a preparation method thereof. The film comprises a Ga2O3 substrate and a layered beta-Ga2O3 structure located on the Ga2O3 substrate; the layered beta-Ga2O3 structure comprises a plurality of main body beta-Ga2O3 layers and homogeneous Inter-Layer layers which are arranged at intervals; the top layer and the bottom layer of the layered beta-Ga2O3 structure are the main body beta-Ga2O3 layers; the grain size of each homogeneous Inter-Layer layer is different from the grain sizes of the two adjacent main body beta-Ga2O3 layers. The homogeneous Inyer-Layer layers are introduced into a traditional homogeneous epitaxial beta-Ga2O3 film structure to form a layered structure with the main body beta-Ga2O3 layers, and the homogeneous Inyer-Layer layers and the main body beta-Ga2O3 layers have different crystal grain sizes, so that crystal grains of the homogeneous Inyer-Layer layers and the main body beta-Ga2O3 layers can be embedded with each other, on one hand, dislocation growth is blocked, the dislocation density in the film is reduced, on the other hand, the two-dimensional growth of the film is enhanced, the flatness of the film is improved, and the performance of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a homoepitaxial β-Ga 2 o 3 Thin films and methods for their preparation. Background technique [0002] With the development of microelectronics technology, the wide application of high-breakdown and high-power devices has gradually encountered more challenges to traditional silicon-based and other narrow-bandgap semiconductor materials. Therefore, breakdown voltage has gradually become one of the key factors to measure device performance. . As a third-generation semiconductor material, β-Ga 2 o 3 The forbidden band width is about 5eV, and the breakdown field strength is equivalent to more than 2 times that of SiC and GaN. β-Ga 2 o 3 The Ballyga figure of merit of β-Ga is also much larger than that of Si material, so β-Ga 2 o 3 Thin films have great potential in the application of high-power high-breakdown devices and solar-blind detectors. [0003] Currently, d...

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Problems solved by technology

[0003] Currently, due to β-Ga 2 o 3 The homoepitaxy of thin films has always been a difficult subject, and it is also difficult to achieve two-dimensional growth of thin films on homogeneous substrates with poor quality, which leads to the fact that the existing homoepitaxial β-Ga 2 o 3 The epitaxial film still has a large density of dislocations and a relatively rough surface morphology, and the high surface roughness of the film will affect the contact between the metal electrode and the film, thereby causing device leakage; at the same time, the more boundaries on the film surface also limit the load capacity. The transport of carriers reduces the mobility of carriers, which in turn limits the application of thin film materials in devices

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