Heterojunction cell and preparation method thereof, and solar cell module

A technology of a heterojunction cell and a transparent conductive layer is applied in the field of solar cells, which can solve the problems of weakening the electric field of the PN junction, increasing the recombination of photogenerated carriers, and low cell efficiency, so as to enhance the electric field strength, enhance the separation effect, and improve the efficiency. Effect

Pending Publication Date: 2021-10-08
ANHUI HUASUN ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the low doping efficiency of the P-type doped layer due to the limitation of the doping amount limit of silicon-based heterojunction cells in the prior art, resulting in the weakening of the electric field at the PN junction on the back of the cell, The weakening of the separation effect of the PN junction on the photogenerated carriers leads to the increase of the recombination of the photogenerated carriers, which eventually leads to the defect of low cell efficiency. A heterojunction cell and its preparation method and solar cell module are provided to at least partially solve the above defects.

Method used

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  • Heterojunction cell and preparation method thereof, and solar cell module
  • Heterojunction cell and preparation method thereof, and solar cell module
  • Heterojunction cell and preparation method thereof, and solar cell module

Examples

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Embodiment 1

[0037] figure 1 It is a flowchart of the preparation method of the heterojunction battery in Example 1 of the present invention, such as figure 1 As shown, this embodiment provides a method for preparing a heterojunction battery, including the following steps: preparing a first passivation layer on one side (front side) of an N-type substrate, and preparing a second passivation layer on the other side (back side). A passivation layer; an N-type doped layer is formed on the surface of the first passivation layer, and a P-type doped layer is formed on the surface of the second passivation layer; the P-type doped layer includes a P-type nanocrystalline silicon film layer, also including a P-type nanocrystalline silicon oxide thin film layer and a P-type nanocrystalline silicon carbide thin film layer, and the P-type nanocrystalline silicon thin film layer and the P-type nanocrystalline silicon oxide thin film layer and the P-type nanocrystalline carbonized The silicon thin film ...

Embodiment 2

[0057] figure 2 It is a flow chart of the preparation method of the heterojunction battery in Example 2 of the present invention, Image 6 It is a schematic structural diagram of the heterojunction battery in Example 2 of the present invention. Such as figure 2 and Image 6 As shown, the difference between this embodiment and embodiment 1 is:

[0058] On the surface of the second passivation layer, the P-type doped layer is sequentially composed of a P-type nanocrystalline silicon oxide thin film layer and a P-type nanocrystalline silicon thin film layer. When forming the P-type doped layer, a P-type nanocrystalline silicon oxide thin film layer is first formed on the second passivation layer, and then a P-type nanocrystalline silicon oxide thin film layer is formed on the P-type nanocrystalline silicon oxide thin film layer.

[0059] For other layer structures and preparation processes, reference may be made to the corresponding layer structures and preparation processe...

Embodiment 3

[0061] image 3 It is a flowchart of the preparation method of the heterojunction battery in Example 3 of the present invention, Figure 7 It is a schematic structural diagram of the heterojunction battery in Example 3 of the present invention. Such as image 3 and Figure 7 Shown, the difference between this embodiment and embodiment 1, embodiment 2 is:

[0062] The P-type doped layer on the surface of the second passivation layer is sequentially composed of a P-type nanocrystalline silicon carbide thin film layer and a P-type nanocrystalline silicon thin film layer from inside to outside. When forming the P-type doped layer, a P-type nanocrystalline silicon carbide thin film layer is first formed on the second passivation layer, and then a P-type nanocrystalline silicon carbide thin film layer is formed on the P-type nanocrystalline silicon carbide thin film layer.

[0063] For other layer structures and preparation processes, reference may be made to the corresponding l...

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Abstract

The invention relates to the technical field of solar cells, and provides a heterojunction cell, a preparation method and a solar cell module. The heterojunction cell comprises an N-type substrate, one side of the N-type substrate is at least provided with a first passivation layer and an N-type doping layer from inside to outside; the other side of the N-type substrate is at least provided with a second passivation layer and a P-type doping layer from inside to outside; the P-type doping layer comprises a P-type nanocrystalline silicon thin film layer, a P-type nanocrystalline silicon oxide thin film layer and / or a P-type nanocrystalline silicon carbide thin film layer which are arranged in a stacked mode. According to the heterojunction cell, the boron doping efficiency is higher, the electric field intensity of the PN junction on the back surface of the cell can be enhanced, the separation effect of the PN junction on photon-generated carriers is enhanced, recombination of the photon-generated carriers is reduced, and finally the efficiency of the cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a heterojunction cell, a preparation method, and a solar cell component. Background technique [0002] Silicon-based heterojunction cells are one of several mainstream high-efficiency solar cell technologies. The battery has a simple structure, high conversion efficiency, and low temperature coefficient, and is an important direction for the development of solar cells and has broad market prospects. [0003] The structure and process flow of silicon-based heterojunction cells are relatively simple. It uses an N-type single crystal silicon layer as the substrate, and includes an intrinsic amorphous silicon layer and a P-type amorphous silicon layer on the substrate side. The other side includes an intrinsic amorphous silicon layer and an N-type amorphous silicon layer. Wherein, the P-type amorphous silicon layer on one side forms a PN junction with the N-type single-crystal ...

Claims

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Application Information

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IPC IPC(8): H01L31/074H01L31/0216H01L31/0352H01L31/18
CPCH01L31/074H01L31/035272H01L31/02167H01L31/1804H01L31/1868Y02P70/50Y02E10/547
Inventor 徐晓华辛科周肃龚道仁王文静梅志纲庄挺挺
Owner ANHUI HUASUN ENERGY CO LTD
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