Preparation method of ultra-thick heat-conducting graphene film

A technology of thermally conductive graphite and graphene film, applied in graphene, chemical instruments and methods, sustainable manufacturing/processing, etc., can solve the problems of low production efficiency, long time consumption, etc., and achieve the effect of enhancing bonding force

Active Publication Date: 2021-09-17
山东热坤新材料有限公司
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

The technical principle is to filter the graphene oxide slurry into a film, then soak the obtained graphene oxide film in water and stack it, dry it slowly to form a thicker graphene oxide film, and then undergo subsequent high-temperature treatment to make a film. A thermally conductive graphene thick film has been obtained, but this technology takes a long time and the production efficiency is low

Method used

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  • Preparation method of ultra-thick heat-conducting graphene film
  • Preparation method of ultra-thick heat-conducting graphene film
  • Preparation method of ultra-thick heat-conducting graphene film

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preparation example Construction

[0031] Such as figure 1 As shown, the invention provides a kind of preparation method of ultra-thick heat-conducting graphene membrane, comprises the following steps:

[0032] 1) adding chitosan to graphene oxide water slurry with a mass concentration of 1 to 6wt.%, wherein the solid content of chitosan is 0.2 to 2wt.%, to obtain a modified graphene oxide slurry;

[0033] 2) Punching out conical protrusions on the substrate, assembling the modified graphene oxide slurry on the substrate to form a graphene oxide film with a thickness of 10-300 microns and spikes;

[0034] 3) Several layers of graphene oxide films are stacked and pressed, and each layer of graphene oxide films is formed under the interlocking action of polymer additives and "spikes" to form a 300-6000 micron graphene oxide sheet ( figure 2 ), heating up to 1200°C at a rate of 1°C / min to remove non-carbon atoms;

[0035] 4) The heat-reduced graphene sheet is heated to 2200-3100° C. at a rate of 5° C. / min under...

Embodiment 1

[0037] 1) With an average sheet diameter of 2 microns and a graphene oxide slurry with a mass concentration of 1.0wt.% as a precursor, add chitosan with a solid content of 1wt.% to the graphene oxide slurry to form a viscous slurry.

[0038] 2) Punch out conical protrusions on the polytetrafluoroethylene substrate, and the height of the protrusions is about 5 microns. Sizing and coating chitosan-modified graphene oxide slurry on a patterned polytetrafluoroethylene substrate to form a film with a film thickness of 50 microns. When the graphene oxide film is lifted off, there are also obvious " Spike".

[0039] 3) Laminate 6 layers of graphene oxide, pressurize to 5Mp, heat up to 60°C, hold heat and hold pressure for 1 hour to form a tightly bonded multilayer graphene oxide film with a thickness of 300 microns.

[0040] 4) Cut the graphene oxide thick film into a square of 100×100mm, put it into a graphite mold, and then raise the temperature to 1200°C at a rate of 1°C / min. Af...

Embodiment 2

[0044] 1) With the average sheet diameter being 0.5 micron, the graphene oxide slurry that the mass concentration is 1.5wt.% is a precursor, and adding solid content to the graphene oxide slurry is 2wt.% chitosan to form a viscous slurry.

[0045] 2) Punch out conical protrusions on the polytetrafluoroethylene substrate, and the height of the protrusions is about 10 microns. Sizing and coating chitosan-modified graphene oxide slurry on a patterned polytetrafluoroethylene substrate to form a film with a film thickness of 60 microns. When the graphene oxide film is lifted off, there are also obvious " Spike".

[0046] 3) Laminate 10 layers of graphene oxide, pressurize to 5Mp, heat up to 60°C, hold heat and hold pressure for 1 hour to form a tightly bonded multi-layer graphene oxide film with a thickness of 600 microns.

[0047] 4) Cut the graphene oxide thick film into a square of 100×100mm, put it into a graphite mold, and then raise the temperature to 1200°C at a rate of 1°...

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Abstract

The invention discloses a preparation method of an ultra-thick heat-conducting graphene film. An ultra-thick graphene oxide film is prepared according to a bionic design principle, chitosan is added into graphene oxide slurry, and the chitosan can be dissolved in the acidic graphene oxide slurry. The method comprises the steps of using the graphene oxide slurry to prepare a thin film by means of suction filtration, blade coating and the like, controlling the morphology of the graphite oxide film, and introducing spikes on the surface of the graphite oxide film; and then stacking a plurality of layers of graphene oxide films, and forming a tightly combined thick film by the graphene oxide films under the combined action of a binder and mechanical embedding. The thickness of the obtained graphene film can reach 500 micrometers or above, the heat conductivity can reach 1146 W/mK, and the graphene film can be used for heat dissipation design of high-power electronic equipment.

Description

technical field [0001] The invention belongs to the technical field of graphene film preparation, and in particular relates to a preparation method of an ultra-thick heat-conducting graphene film. Background technique [0002] The rapid development of integrated circuits makes the heat dissipation of electronic devices a common problem. Taking smartphones as an example, the peak power consumption of smartphones in the 5G era can reach more than 10W. Heat accumulation is easily formed in high-power parts such as the central processing unit (CPU) and baseband chips. If the heat in these parts cannot be removed by effective means, local hot spots will be generated, which will affect the performance and life of the device. Graphite has a very high plane thermal conductivity, which is very beneficial to the lateral temperature uniformity of local heat. Therefore, artificial graphite films are widely used as heat dissipation materials in electronic products such as smartphones. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184C01B32/194H05K7/20
CPCC01B32/184C01B32/194H05K7/20C01B2204/32C01B2204/24Y02P20/10
Inventor 刘占军陶则超陈成猛孔庆强
Owner 山东热坤新材料有限公司
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