Half-cell preparation method, half-cell and solar cell

A half-cell and transparent electrode technology, applied in the field of solar cells, can solve the problems of limiting the photovoltaic performance of all-inorganic perovskite solar cells, poor thermal stability of precursor films, unfavorable commercial application of perovskite solar cells, etc.

Pending Publication Date: 2021-09-14
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Claims
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Problems solved by technology

In recent years, perovskite solar cells have emerged like a "dark horse", with a photoelectric conversion efficiency of 25.5%. However, the thermal stability of traditional organic-inorganic hybrid perovskite precursor films is poor, which is not conducive to the development of perovskite solar cells. commercial application of
CsPb(I,Br) Prepared by Substituting Inorganic Cesium(Cs) Ions for Organic Ions 3 All-inorganic perovskite precursor film overcomes the problem of poor stability in high-temperature environments
[0003] However, CsPb(I,Br) 3 There are many defects in the bulk material of the perovskite precursor film, resulting in serious recombination, which limits the further improvement of the photovoltaic performance of all-inorganic perovskite solar cells

Method used

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  • Half-cell preparation method, half-cell and solar cell
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[0034] In view of this problem, an embodiment of the present invention provides a method for preparing a half-cell to overcome the above problem. figure 1 It is a flowchart of a half-cell preparation method in a solar cell provided according to an embodiment of the present invention, such as figure 1 As shown, the method includes the following steps:

[0035] S100: Mix cadmium salt, dimethylamine lead iodide, cesium iodide, N,N-dimethylformamide, and dimethylsulfame to form a perovskite precursor;

[0036] S200: spin-coating the perovskite precursor solution on the transparent electrode covered with the first carrier transport layer, forming a perovskite precursor film on the first carrier transport layer;

[0037] S300: Annealing the transparent electrode loaded with the perovskite precursor film and the first carrier transport layer to obtain a half-cell; wherein the annealed perovskite precursor film is called a perovskite film. Among them, the perovskite film includes ca...

Embodiment 1

[0061] Step 1: Spread 35 μL of titanium isopropoxide solution with a concentration of 0.2 mol / L on the treated conductive glass, spin coating at a speed of 3000 rpm for 30 seconds, place the film on a hot stage at 130 ° C for 10 minutes, and then transfer to Annealed in a muffle furnace at 500°C for 2 hours to obtain TiO 2 electron transport layer.

[0062] Step 2: Weigh 444mg DMAPbI 3 , 182mg CsI and a certain amount of CdCl 2 , dissolved in 850 μL of DMF and 150 μL DMSO mixed solvent to form a perovskite precursor, in TiO 2 The electron transport layer was first rotated at a speed of 1500rpm for 10s, and then rotated at a speed of 4000rpm for 30s. The conductive glass, electron transport layer and perovskite layer were first heated on a 70°C heating stage for 3 minutes, and then heated on a 190°C heating stage in air for 9 minutes to obtain a half-cell, in which the annealed perovskite precursor film included CdCl 2 Doped CsPbI 3 Perovskite.

[0063] Step 3: Deposit a ...

Embodiment 2

[0066] Based on the embodiment in embodiment 1, the steps in embodiment 2 are exactly the same as in embodiment 1, only the CdCl in step 2 in embodiment 1 2 Replaced with the same concentration of CdBr 2 , the rest of the parameters are the same as those in Example 1, and the experimental parameters are listed in Table 2.

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Abstract

The invention provides a half-cell preparation method, a half-cell and a solar cell, and the half-cell preparation method comprises the steps: mixing cadmium salt, dimethylamine lead iodine, cesium iodide, N, N-dimethylformamide and dimethyl sulfoxide to form a perovskite precursor solution; and spin-coating the perovskite precursor solution on the transparent electrode covered with the first carrier transport layer, and forming a perovskite precursor film on the first carrier transport layer. The transparent electrode loaded with the perovskite precursor film and the first carrier transport layer is subjected to annealing treatment to obtain a half cell, the annealed perovskite precursor film is called a perovskite thin film, and the perovskite thin film comprises a cadmium-doped CsPb(I, Br)3 crystal. The perovskite precursor film comprises a cadmium-doped CsPb(I, Br)3 crystal, and the cadmium-doped CsPb(I, Br)3 crystal effectively solves the crystal defect of an inorganic perovskite film, improves the crystal quality, prolongs the service life of a photon-generated carrier, improves the mobility of the photon-generated carrier, and obtains a high-efficiency and high-stability perovskite solar cell.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing a half cell, a half cell and a solar cell having the same. Background technique [0002] The development of solar cells is an important way to solve the problems of fossil energy depletion and pollution. At present, silicon-based solar cells that have been industrialized have great limitations in practical applications, and are not suitable for special occasions such as flexibility and building integration. In recent years, perovskite solar cells have emerged like a "dark horse", with a photoelectric conversion efficiency of 25.5%. However, the thermal stability of traditional organic-inorganic hybrid perovskite precursor films is poor, which is not conducive to the development of perovskite solar cells. commercial application. CsPb(I,Br) Prepared by Substituting Inorganic Cesium(Cs) Ions for Organic Ions 3 The all-inorganic perovskite precursor film overcomes...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42H01L51/46
CPCH10K71/12H10K71/40H10K30/10H10K2102/00Y02E10/549
Inventor 孟庆波赵文燕李冬梅石将建罗艳红吴会觉
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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