Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor structure, manufacturing method thereof and memory

A technology of semiconductor and insulating structure, applied in semiconductor devices, electric solid-state devices, transistors, etc., can solve problems such as damage to components and peripheral circuits

Pending Publication Date: 2021-08-27
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the semiconductor components are arranged very closely, the generated stress may cause damage to the components and peripheral circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure, manufacturing method thereof and memory
  • Semiconductor structure, manufacturing method thereof and memory
  • Semiconductor structure, manufacturing method thereof and memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.

[0026] In the description of this application, it should be noted that unless otherwise specified or limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connection, or integrated connection; it can be mechanical connection, electrical connection or mutual communication; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components or the mutual communication between two components role relationsh...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor structure which comprises a substrate, an active layer and an insulating layer. The active layer is located on the substrate and comprises an element structure and a boundary structure surrounding the element structure, the element structure comprises a plurality of element units arranged at intervals, and the boundary structure comprises a boundary part, a protruding part protruding inwards from the boundary part and a branch part. The insulating layer comprises a first insulating structure located in the boundary structure and a second insulating structure located on the outer side of the boundary structure, the first insulating structure is arranged between the element units and the boundary structure to insulate the element units, and the second insulating structure is used for insulating the boundary structure from the external active area. In the direction parallel to the edge of the side, connected with the protruding part, of the boundary part, the width of the branch part is smaller than that of the protruding part. The invention further discloses a manufacturing method of the semiconductor structure and a memory. The semiconductor structure has good stress resistance and reliability.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to a semiconductor structure, a manufacturing method thereof, and a memory. Background technique [0002] With the advancement of technology and the growth of demand, electronic products such as computers generally require large-capacity memories, such as DRAMs. In order to increase the storage capacity of the memory, the size of the storage unit inside the memory is getting smaller and smaller. The semiconductor structure is generally based on the active layer defined on the substrate, and the element structure of different layers is formed on it. Taking the storage unit of a memory as an example, a plurality of component units will form an array in a regular arrangement in a predetermined component area, and one component unit will eventually form a storage unit. In addition, there are peripheral circuits around the storage unit. Since the semiconductor elements are arran...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/108
CPCH10B12/30H10B12/02H10B12/01H10B12/50
Inventor 张钦福冯立伟童宇诚
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com