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Active domain structure and its formation method

A technology of active area and active area, applied in the field of active area structure and its formation, can solve problems such as damage and unstable operation of memory cells, and achieve the effect of avoiding damage

Active Publication Date: 2022-05-06
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase the memory capacity, the size of the storage unit of the memory needs to be reduced, but a large reduction in the size of the storage unit will cause other problems, making the operation of the storage unit unstable or damaged

Method used

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  • Active domain structure and its formation method
  • Active domain structure and its formation method
  • Active domain structure and its formation method

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Embodiment Construction

[0034] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0035] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0036] It will be understood that when an element such as a layer, film, region, or substrate is referred to as ...

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Abstract

The invention discloses an active area structure and its forming method. The forming method of the active area structure includes: forming a plurality of sacrificial patterns on a substrate, wherein at least part of the sacrificial patterns include a horizontal portion and a vertical portion, wherein at least The horizontal part of part of the sacrificial pattern is aligned with the horizontal part of another adjacent sacrificial pattern in a horizontal direction, and the vertical part of at least part of the sacrificial pattern is mutually aligned with the vertical part of another adjacent sacrificial pattern in a vertical direction. aligning; forming a plurality of spacer patterns, each spacer pattern wrapping around a sacrificial pattern. The forming method of the active region structure can block the stress generated by the shallow trench insulating layer in the peripheral large region on the component region, and prevent the component units in the peripheral region of the component region from being damaged due to the stress. The boundary structure can compensate the uneven stress between the active lines at the ends, and can also avoid the damage of the module unit.

Description

technical field [0001] The present invention relates to semiconductor technology. More specifically, the present invention relates to an active region structure and method of forming the same. Background technique [0002] In recent years, the design of electronic products generally has multi-functional and fast processing capabilities. In order to increase processing capabilities, such as computer systems or multi-functional electronic products, large-capacity dynamic random access memory (DRAM) is required. In order to increase the memory capacity, the size of the storage unit of the memory needs to be reduced, but a large reduction in the size of the storage unit will cause other problems, making the operation of the storage unit unstable or damaged. [0003] Semiconductor components are generally based on the active layer unit defined on the substrate to form the desired component structure. Therefore, the active layer unit on the substrate is the basis of the compone...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/01H10B12/00H10B12/50
Inventor 林刚毅
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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