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Active region structure and forming method thereof

A technology of active area and active area, applied in the field of active area structure and its formation, can solve problems such as damage and unstable operation of memory cells, and achieve the effect of avoiding damage

Active Publication Date: 2020-12-25
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase the memory capacity, the size of the storage unit of the memory needs to be reduced, but a large reduction in the size of the storage unit will cause other problems, making the operation of the storage unit unstable or damaged

Method used

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  • Active region structure and forming method thereof
  • Active region structure and forming method thereof
  • Active region structure and forming method thereof

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Embodiment Construction

[0034] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0035] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0036] It will be understood that when an element such as a layer, film, region, or substrate is referred to as ...

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Abstract

The invention discloses an active region structure and a forming method thereof. The forming method of the active region structure comprises the steps that a plurality of sacrificial patterns are formed and located above a substrate, wherein at least part of the sacrificial patterns comprise a horizontal part and a vertical part, the horizontal parts of at least part of the sacrificial patterns are aligned with the horizontal parts of another adjacent sacrificial patterns in a horizontal direction, and the vertical parts of at least part of the sacrificial patterns are aligned with the vertical parts of another adjacent sacrificial patterns in a vertical direction; and a plurality of gap wall patterns are formed, wherein each gap wall pattern surrounds the periphery of one sacrificial pattern. According to the forming method of the active region structure, the stress generated by a shallow trench insulating layer of a peripheral large region to a component region can be blocked, and component units in the peripheral edge region of the component region are prevented from being damaged by the stress. The boundary structure may compensate for uneven stresses between the active lines at the ends, and may also avoid damage to the component units.

Description

technical field [0001] The present invention relates to semiconductor technology. More specifically, the present invention relates to an active region structure and method of forming the same. Background technique [0002] In recent years, the design of electronic products generally has multi-functional and fast processing capabilities. In order to increase processing capabilities, such as computer systems or multi-functional electronic products, large-capacity dynamic random access memory (DRAM) is required. In order to increase the memory capacity, the size of the storage unit of the memory needs to be reduced, but a large reduction in the size of the storage unit will cause other problems, making the operation of the storage unit unstable or damaged. [0003] Semiconductor components are generally based on the active layer unit defined on the substrate to form the desired component structure. Therefore, the active layer unit on the substrate is the basis of the compone...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242H10B12/00
CPCH10B12/01H10B12/00H10B12/50
Inventor 林刚毅
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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