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Active region structure and method of forming same

一种有源区域、有源层的技术，应用在半导体器件、电气元件、晶体管等方向，能够解决损毁、存储单元操作不稳定等问题，达到避免损坏的效果

Active Publication Date: 2019-07-05
UNITED MICROELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase the memory capacity, the size of the storage unit of the memory needs to be reduced, but a large reduction in the size of the storage unit will cause other problems, making the operation of the storage unit unstable or damaged

Method used

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  • Active region structure and method of forming same
  • Active region structure and method of forming same
  • Active region structure and method of forming same

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Embodiment Construction

[0050] Semiconductor elements, such as memory cells, need to be isolated to achieve the effect of insulation, and the insulating structure is formed between these element units and between these elements under the requirement of high element density, for example, by means of a shallow trench insulation layer. Between the unit and the surrounding active area to provide insulation between components.

[0051] The invention considers the insulation quality between components and proposes a corresponding design.

[0052] The material of the shallow trench insulation layer is a dielectric material, and the element unit and the peripheral active area are formed by a part of the substrate, such as the surface layer of the silicon substrate, which is formed after patterning. Furthermore, the distance between the element units and the peripheral active area is larger than the gap between these element units, and occupying a larger area produces greater stress. Therefore, the material ...

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PUM

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Abstract

The present invention discloses an active area structure and its formation method.The active area structure includes the component area, the source layer, and the insulation layer of the shallow groove.The component area is defined on a base.A part of the multiple component units.The shallow groove insulation layer has the first component to be formed in the boundary structure to make the multiple component units insulating, and the second component around the outer structure of the boundary structure.The second part of the shallow groove insulation layer isolates the multiple component units from the surrounding source areas.

Description

technical field [0001] The present invention relates to semiconductor technology. More particularly, the present invention relates to semiconductor active region structures and methods of forming the same. Background technique [0002] In recent years, the design of electronic products generally has multi-functional and fast processing capabilities. In order to increase processing capabilities, such as computer systems or multi-functional electronic products, large-capacity dynamic random access memory (DRAM) is required. In order to increase the memory capacity, the size of the storage unit of the memory needs to be reduced, but a large reduction in the size of the storage unit will cause other problems, making the operation of the storage unit unstable or damaged. [0003] A semiconductor element is generally based on an active layer unit defined on a substrate, and a desired element structure is formed on top. Therefore, the active layer unit on the substrate is the ba...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/00H10B12/09H01L21/76229H01L21/76224H01L21/461
Inventor 黄财煜
Owner UNITED MICROELECTRONICS CORP
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