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High-purity tantalum rotating target material and preparation method thereof

A rotating target, high-purity technology, applied in metal processing equipment, metal material coating process, ion implantation plating, etc. Uniform and controllable layer thickness, high purity, and low process difficulty

Inactive Publication Date: 2021-08-27
BEIJING MINING & METALLURGICAL TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing processing methods for rotating targets, especially refractory metal rotating targets such as tantalum, generally face problems such as difficult process, complicated post-heat treatment process, low yield, and low target density, which cannot meet the application requirements.

Method used

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  • High-purity tantalum rotating target material and preparation method thereof
  • High-purity tantalum rotating target material and preparation method thereof
  • High-purity tantalum rotating target material and preparation method thereof

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preparation example Construction

[0031] The invention provides a method for preparing a high-purity tantalum rotating target, which includes the following steps: using an induction plasma spheroidization process to prepare high-purity spherical tantalum powder, and then using the high-purity spherical tantalum powder as a spraying raw material, using low-pressure plasma The spraying process prepares a high-purity tantalum coating on the surface of the rotating substrate, thereby producing a high-purity tantalum rotating target.

[0032] Specifically, the preparation method of the high-purity tantalum rotating target may include the following:

[0033] (1) The high-purity spherical tantalum powder prepared by the induction plasma spheroidization process includes: the original tantalum powder with a particle size of 25-45 μm, a purity ≥ 99.99%, and an oxygen content ≤ 300ppm (the original tantalum powder refers to the existing tantalum powder. In the prior art, tantalum powder which can be obtained by commercia...

Embodiment 1

[0043] like figure 1 , figure 2 , image 3 and Figure 4 Shown, a kind of high-purity tantalum rotating target material, its preparation method comprises the following steps:

[0044] Step 1. The original tantalum powder with a particle size of 25-45 μm, a purity of 99.99%, and an oxygen content of 280 ppm (the original tantalum powder is the tantalum powder before the induction plasma spheroidization process, and its appearance is as follows: figure 1 Shown in A) as the feed material, the original powder is processed by induction plasma spheroidization process, the hydrogen flow rate is controlled to 80slpm, the plasma power is 80kW, the carrier gas flow rate is 5slpm, the argon flow rate is 90slpm, and the powder feeding rate is 50g / min, and then ultrasonically cleaned and dried to prepare high-purity spherical tantalum powder (the high-purity spherical tantalum powder is the tantalum powder after the induction plasma spheroidization process, and its appearance is as fo...

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Abstract

The invention discloses a high-purity tantalum rotating target material and a preparation method thereof. The preparation method comprises the steps that high-purity spherical tantalum powder is prepared through an induction plasma spheroidizing technology, then the high-purity spherical tantalum powder serves as a spraying raw material, a high-purity tantalum coating is prepared on the surface of a rotating substrate through a low-pressure plasma spraying technology, and the high-purity tantalum rotating target material is prepared. According to the method, the process difficulty is small, the method is not limited by the material and the size of the rotating substrate, the spraying applicability of the tantalum rotating target material is greatly improved, the thickness of the rotating target material can be easily and accurately controlled by adjusting the spraying time, a complex post-heat treatment process is avoided, the yield of the rotating target material is extremely high, and the manufacturing difficulty and the manufacturing cost of the rotating target material are reduced. The prepared high-purity tantalum rotating target material has the characteristics of high purity, low oxygen content, uniform and controllable coating thickness and high density, and is suitable for preparation and application of a high-purity tantalum sputtering film.

Description

technical field [0001] The invention relates to the field of tantalum targets for sputtering, in particular to a high-purity tantalum rotary target (the high-purity tantalum rotary target refers to a tantalum rotary target with a purity level of 5N (99.999%)) and a preparation method thereof . Background technique [0002] Tantalum has high electrical conductivity, high thermal stability, and barrier diffusion. Tantalum is prepared into a tantalum target and used for sputter coating, which can serve the fields of integrated circuits, semiconductors, and optics. Tantalum targets are generally made by the rolling method, that is, planar tantalum targets are formed by forging and rolling tantalum ingots, and then defects are eliminated by post-heat treatment processes to form dense tantalum targets, but this process generally only produces planar targets. [0003] With the development of science and technology, some high-end applications need to use rotating targets for coati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C4/134C23C4/08B22F9/14B22F1/00C23C4/14C23C4/16
CPCC23C14/3414C23C14/3407C23C4/134C23C4/08B22F9/14C23C4/14C23C4/16B22F2301/20B22F2304/10B22F1/065
Inventor 原慷彭浩然张鑫颜正庞小肖许贞元卢晓亮
Owner BEIJING MINING & METALLURGICAL TECH GRP CO LTD
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