Semiconductor device, receiving device, and transmitting device

A technology for transmitting devices and semiconductors, which is applied in the field of receiving devices, transmitting devices, and semiconductor devices, and can solve problems such as signal processing performance degradation of signal processing circuits, and achieve the effect of reducing the influence of parasitic inductance

Pending Publication Date: 2021-08-13
THINE ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the characteristic impedance of the signal transmission path connected to the terminal of the package is, for example, 50Ω
[0004] As shown in this example, the absolute value of the impedance of the bonding wire (57.8 Ω) is not negligible with respect to the characteristic impedance (50 Ω) of the signal transmission path, which causes the signal processing performance of the signal processing circuit on the semiconductor chip to deteriorate. the elements of

Method used

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  • Semiconductor device, receiving device, and transmitting device
  • Semiconductor device, receiving device, and transmitting device
  • Semiconductor device, receiving device, and transmitting device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0053] Figure 5 It is a figure which shows the structure of the semiconductor device 111 of 1st Embodiment. The semiconductor device 111 includes a semiconductor chip 10A and a package 20 , and receives a signal transmitted through the signal transmission path 3 .

[0054] A semiconductor chip (10A) has a signal processing circuit 11, ESD protection elements 12, 13, a plurality of pads, and a first resistor 16, which are formed in or on a semiconductor substrate. On the semiconductor chip 10A, among the plurality of pads, the first pad 14 and the second pad 15 are not shorted to each other. The signal input terminal of the signal processing circuit 11 is connected to the second pad 15 . The ESD protection element 12 is provided between a reference potential supply terminal for supplying a power supply potential and the first pad 14 . The ESD protection element 13 is provided between a reference potential supply terminal for supplying a ground potential and the first pad 14...

no. 2 Embodiment approach

[0076] Figure 8 It is a figure which shows the structure of the semiconductor device 121 of 2nd Embodiment. This semiconductor device 121 includes a semiconductor chip 10B and a package 20 , and receives a signal transmitted through the signal transmission path 3 . Compared with the semiconductor chip 10A of the first embodiment, the semiconductor chip 10B of the second embodiment is different in that it further includes a second resistor 17 . The second resistor 17 is provided between a reference potential supply terminal for supplying a power supply potential and the second pad 15 .

[0077] Figure 9 It is a figure which shows the structure of the semiconductor device 122 of 2nd Embodiment. This semiconductor device 122 includes a semiconductor chip 50B and a package 60 , and transmits a signal to the signal transmission line 4 . Compared with the semiconductor chip 50A in the first embodiment, the semiconductor chip 50B in the second embodiment is different in that it...

no. 3 Embodiment approach

[0082] Figure 10 It is a figure which shows the structure of the semiconductor device 131 of 3rd Embodiment. This semiconductor device 131 includes a semiconductor chip 10C and a package 20 , and receives a signal transmitted through the signal transmission path 3 . Compared with the semiconductor chip 10A of the first embodiment, the semiconductor chip 10C of the third embodiment is different in that it further includes a third resistor 18 . The third resistor 18 is provided between the first pad 14 and the second pad 15 .

[0083] Figure 11 It is a figure which shows the structure of the semiconductor device 132 of 3rd Embodiment. This semiconductor device 132 includes a semiconductor chip 50C and a package 60 , and transmits a signal to the signal transmission line 4 . Compared with the semiconductor chip 50A of the first embodiment, the semiconductor chip 50C of the third embodiment is different in that it further includes a third resistor 58 . The third resistor 58...

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Abstract

The invention provides a semiconductor device, a receiving device and a transmitting device. The semiconductor device (111) includes a semiconductor chip (10A) and a package (20). A semiconductor chip (10A) has a signal processing circuit (11), a plurality of pads, and a first resistor (16), which are formed on a semiconductor substrate. On the semiconductor chip (10A), a first pad (14) and a second pad (15) among the plurality of pads are not short-circuited to each other. A signal input terminal of the signal processing circuit (11) is connected to the second pad (15). The first resistor (16) is provided between a reference potential supply terminal for supplying a power supply potential and the first pad (14). Any terminal (21) among the plurality of terminals of the package (20) is connected to the first pad (14) through a first bonding wire (31), and is connected to the second pad (15) through a second bonding wire (32).

Description

technical field [0001] The present invention relates to a semiconductor device, a receiving device, and a transmitting device. Background technique [0002] A semiconductor device generally mounts a semiconductor chip having a signal processing circuit composed of many elements such as transistors and a plurality of bonding pads in a package having a plurality of terminals for inputting or outputting signals to and from the outside. The thin-diameter bonding wires connect the pads of the semiconductor chip and the terminals of the package to each other. [0003] Bonding wires have parasitic inductance. For example, as a typical example of a bonding wire, when the wire length is 1 mm and the wire diameter is 0.015 mm, the parasitic inductance of the bonding wire is about 0.92 nH. When the frequency of the signal is assumed to be 10 GHz, the absolute value of the impedance of the bonding wire is 57.8Ω (=2π×10GHz×0.92nH). In addition, the characteristic impedance of the sign...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04H02M1/00H02M1/32
CPCH02M1/00H02M1/32H02H9/04H01L28/20H01L2224/49113H01L2224/48227H01L2224/05554H01L2224/45015H01L2224/45144H01L2224/45147H01L24/45H01L2924/00014H01L24/48H01L24/49H01L2924/10161H01L27/0255H01L24/06H01L2224/4917H01L24/05H01L2924/30107H01L2224/04042H01L23/60H01L2924/20751H01L2924/00015H01L2224/05599H01L27/0288H02H9/046H01L27/0248H01L2224/48147H01L25/0652
Inventor 小胜秀行
Owner THINE ELECTRONICS
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