A high-speed semiconductor laser and its packaging structure and method

A packaging structure and laser technology, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of lower device reliability, lower laser working speed, serious laser heating, etc., to improve yield and laser flip-chip welding is reliable Effect

Active Publication Date: 2021-12-14
武汉云岭光电股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase the laser modulation rate, one measure is to reduce the size of the laser chip, such as reducing the chip length and the width of the active region, but it will lead to problems such as difficult cleavage and serious heating of the laser; another measure is to optimize the quantum well design , such as increasing the amount of strain, etc., but it will lead to the occurrence of dislocations and defects, reducing the reliability of the device
On the other hand, for high-speed semiconductor laser packaging, the industry generally adopts the method with the P-side electrode facing upwards. This method is simple and easy to implement, but the disadvantage is that it generates more serious heat, which will reduce the working speed of the laser.
At the same time, the P-side electrode gold wire lead needs to be added to the pad, which increases the parasitic capacitance. At the same time, the size of the pad is relatively small, and generally only one gold wire can be placed on the pad position, resulting in the introduction of a large parasitic inductance.

Method used

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  • A high-speed semiconductor laser and its packaging structure and method
  • A high-speed semiconductor laser and its packaging structure and method
  • A high-speed semiconductor laser and its packaging structure and method

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Experimental program
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Embodiment 1

[0041] see Figure 1 to Figure 3 , an embodiment of the present invention provides a high-speed semiconductor laser, including an N-type substrate, an epitaxial structure is grown on the upper surface of the N-type substrate, an insulating layer is deposited after etching a ridge waveguide on the upper surface of the N-type substrate, and the two sides of the ridge waveguide are The sides of the ridge waveguide are grooves, and the grooves on both sides of the ridge waveguide are also covered with an insulating layer. Only the insulating layer on the upper surface of the ridge waveguide is removed, and a P-type electrode is deposited on the upper surface of the ridge waveguide; the lower surface of the N-type substrate is provided with an N-type electrode.

[0042] When depositing the P-type electrode, the P-type electrode can only cover the upper surface area of ​​the ridge waveguide. Of course, when depositing the P-type electrode, the deposition area of ​​the P-type electrode...

Embodiment 2

[0053] see Figure 5 to Figure 8 , an embodiment of the present invention provides a high-speed semiconductor laser packaging structure, including a semiconductor laser and a heat sink, the upper surface of the heat sink is provided with a P-type transition electrode, the semiconductor laser is flip-chip on the heat sink, and the P of the semiconductor laser is The P-type electrode faces down, and is soldered to the P-type transition electrode on the upper surface of the heat sink through solder. The P-type transition electrode on the heat sink extends beyond the laser, and the extension of the P-type transition electrode beyond the laser corresponds to the package on the tube base The pins are electrically connected, and the extension of the P-type transition electrode beyond the laser can be connected with the corresponding package pin on the tube base through a gold wire lead, or can be directly welded.

[0054] Further, the light-emitting end surface of the laser protrudes...

Embodiment 3

[0062] see Figure 5 to Figure 8 , an embodiment of the present invention provides a high-speed semiconductor laser flip-chip packaging method,

[0063] Including the following steps:

[0064] Making the semiconductor laser described in Embodiment 1;

[0065] The manufacturing steps of the semiconductor laser include: growing a buffer layer on an N-type InP substrate, a quantum well active region, and a P-type InP confinement layer and a P-type InGaAs contact layer. In the process preparation, it is necessary to etch out the light-emitting strip in the active area with a width of approximately 2um, then deposit an insulating layer, remove the insulating layer on the light-emitting strip, and then deposit a P-type electrode. After the substrate is thinned to approximately ~100um, an N-type electrode is deposited on the N surface, and then the laser is cut into cuboids with a cavity length of 150-500um, a width of ~250um, and a thickness of ~100um by cleavage and cleavage. Bo...

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Abstract

The invention relates to a high-speed semiconductor laser and its packaging structure and method. The high-speed semiconductor laser packaging structure includes a semiconductor laser and a heat sink, and a P-type transition electrode is arranged on the heat sink. On sinking, the P-type electrode of the semiconductor laser faces downward, and is welded with the corresponding P-type transition electrode on the heat sink by solder, and the P-type transition electrode on the heat sink is electrically connected with the corresponding package pin on the tube base. The strip width of the active area is 1-5um, and the P-side electrode is very narrow, which greatly improves the speed. The P-side of the semiconductor laser does not need to be provided with gold wire lead pads, which can achieve the effect of improving heat dissipation and reducing parasitic capacitance, thereby improving laser performance. rate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to a high-speed semiconductor laser and its packaging structure and method. Background technique [0002] With the development of 5G technology and data centers, the modulation rate requirements for optical communication semiconductor lasers are getting higher and higher. The current 10G rate has been mass-produced and mature, and 25G rate lasers have also begun to be used on a large scale. In order to increase the laser modulation rate, one measure is to reduce the size of the laser chip, such as reducing the chip length and the width of the active region, but it will lead to problems such as difficult cleavage and serious heating of the laser; another measure is to optimize the quantum well design , such as increasing the amount of strain, etc., but it will lead to the occurrence of dislocations and defects, reducing the reliability of the device. On the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/042H01S5/024H01S5/02345
CPCH01S5/04256H01S5/024
Inventor 陈志标周丹
Owner 武汉云岭光电股份有限公司
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