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Homojunction charge transfer film for perovskite solar cell

A solar cell and charge transfer technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as carrier recombination, achieve the effect of simple preparation process, improve efficiency, and solve the problem of interface carrier recombination

Pending Publication Date: 2021-07-23
徐州革锐能源科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a homojunction charge transport film for perovskite cells, which solves the problem of carrier recombination between the charge transport film of the existing perovskite solar cell and the perovskite active layer interface, to improve device efficiency

Method used

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  • Homojunction charge transfer film for perovskite solar cell
  • Homojunction charge transfer film for perovskite solar cell
  • Homojunction charge transfer film for perovskite solar cell

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Embodiment 1

[0032] (1) Specific process of preparing double-layer NiO hole transport thin film with homojunction structure by solution spin coating

[0033] ① After the conductive substrate is cut and etched, the conductive substrate is ultrasonically cleaned with deionized water, ethanol, acetone, isopropanol, etc. in sequence.

[0034] ②Dissolve 5mmol of nickel nitrate in 5mL of ethylene glycol, and then add 0.3g of ethylenediamine to prepare the precursor solution.

[0035] ③ Add 0.025mol copper nitrate to the above precursor solution, stir to dissolve. The solution was dropped onto the conductive substrate, and rotated for 40 s at a speed of 5000 rpm. The resulting film was heat-treated at 200°C and then cooled naturally.

[0036] ④ On the basis of the above film, add the undoped nickel oxide precursor solution dropwise again. Under the rotating speed of 5000rpm, rotate for 40s. ⑤ After the obtained film is annealed at 450°C, the preparation of the double-layer NiO hole transport ...

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Abstract

The invention provides a homojunction charge transfer film for the perovskite solar cell. The film is applied to the perovskite solar cell, and the photoelectric property of a device can be remarkably improved. Charge transport materials with different impurity concentrations are deposited on a substrate layer by layer by adopting a spin coating method, a spraying method or an atomic layer deposition method and the like, and a built-in electric field beneficial to carrier transport can be generated in the charge transport film by regulating and controlling the impurity concentrations, so that separation and transport of carriers on a perovskite / charge transport film interface are accelerated, and the performance of the perovskite cell device is improved. Compared with a charge transport film with a traditional structure for a perovskite battery, the film has the advantages that a built-in electric field beneficial to carrier transport can be generated in the film, so that interface carrier recombination is reduced, and the battery performance is improved.

Description

technical field [0001] The invention relates to a charge transport thin film for a perovskite solar cell and a preparation method thereof. The thin film is characterized in that it contains a homojunction structure. Background technique [0002] Photovoltaic plays an important role in promoting my country's green development and ecological civilization construction. At this stage, the photovoltaic industry has started to "achieve grid parity". The market urgently needs new high-efficiency, low-cost solar cell technologies. Perovskite solar cells are popular candidates due to their low fabrication cost and high efficiency. However, according to the Shockley-Queisser limit theory, there is still a lot of room for improvement in the performance of perovskite solar cells, and the non-radiative recombination of carriers at the interface between the charge transport film and the perovskite active layer is an important limiting factor. Therefore, designing new charge transport f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/15Y02E10/549
Inventor 宋健
Owner 徐州革锐能源科技有限公司
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