Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Optical switch based on quantum-confined Stark effect

A technology based on the Stark effect and quantum confinement, which is applied in the field of optical switches based on the quantum confinement Stark effect, can solve the problems of insignificant filtering effect, small optical switch ratio, and reduced reliability, so as to achieve clear design principles, Reduced transmittance, high contrast effect

Active Publication Date: 2022-07-22
SOUTHEAST UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the all-optical switch based on quantum dots has no significant filtering effect on light, the optical switch ratio is not large, and the reliability is reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical switch based on quantum-confined Stark effect
  • Optical switch based on quantum-confined Stark effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] A preparation method of an optical switch based on the quantum confinement Stark effect of the present invention specifically includes the following steps:

[0027] Step 1: Etch the interdigitated electrodes 1 on the quartz substrate, and the electrode spacing is in the order of several microns; specifically:

[0028] Dehydrate and bake the quartz substrate at a baking temperature of 150-200 °C, and coat a layer of negative su8 photoresist on the quartz substrate with a thickness of about 2 μm; The exposure characteristics of the glue are fixed, the soft baking temperature is 90-100°C, and the time is 10min; the substrate is blocked with a mask for exposure; post-exposure baking is performed to activate the chemical properties of the photoresist after exposure, and the temperature is 90°C, The time is 5min; for development, soak in NaOH solution with a concentration of 5%, and control the degree of development by controlling the soaking time; hard bake, bake at 150-200 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An optical switch based on the quantum confinement Stark effect, characterized in that interdigital electrodes are etched on a quartz substrate, and an ordered oriented II-VI group semiconductor nanosheet (NPLs) layer is deposited between the interdigitated electrodes, Among them, the ratio of oleic acid in the oleic acid / diethylene glycol (OA / DEG) solution is controlled mainly through the self-assembly of the liquid-liquid interface, so that the nanosheet faces down, and the edges on both sides face the positive and negative electrodes, thereby enhancing the quantum confinement Stark effect to achieve high contrast ratio of the optical switch. The invention is an all-optical switch based on the quantum confinement Stark effect, with clear design principle, simple structure, no polarization dependence, high switching ratio, and realizing a high-performance optical switch.

Description

technical field [0001] The invention belongs to the technical field of photoelectric switches, in particular to an optical switch based on quantum confinement Stark effect. Background technique [0002] The rapid development of the information Internet era has put forward higher requirements for the information storage, transmission rate and reliability of optical communication technology. As one of the basic unit devices of the integrated optical system, the optical switch plays a very important role in the fields of information interconnection within the chip, long-distance data transmission, and optical signal exchange between networks. In addition, the optical switch is also the cornerstone of the realization of photonic computers and quantum computers, and its performance often determines the upper limit of the performance of the entire system. Therefore, it is crucial to realize high-performance optical switches with high speed, low power consumption, high contrast ra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/109G02F1/35H01L31/0296H01L31/0352H01L31/18
CPCG02F1/3515H01L31/109H01L31/1836H01L31/0296H01L31/035236Y02P70/50
Inventor 张家雨陈伟敏项文斌
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products