Surface Acoustic Wave Device

A surface acoustic wave, high sound velocity technology, applied in the field of surface acoustic wave devices, can solve problems such as filter failure, inability to meet 5G high power requirements, and reduced durability, to improve withstand power, improve anti-electromigration ability, Avoid large drift effects

Active Publication Date: 2021-12-10
北京超材信息科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This has led to the inability of SAW filters on the market to meet the high power requirements of 5G
[0004] In addition, as the frequency of the device increases, the lines of the IDT (Interdigital transducer) electrodes will become thinner, and the repetitive stress from the surface acoustic wave will increase sharply with the increase of the frequency, resulting in the failure of the filter. Therefore, in the SAW filter Durability decreases as maximum withstand power increases

Method used

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Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach

[0033] (1) Embodiment one

[0034] This embodiment provides a surface acoustic wave device, including a piezoelectric substrate 101 and an IDT electrode disposed on the piezoelectric substrate 101, the piezoelectric substrate can be quartz (SiO2), lithium niobate (LiNbO3) or lithium tantalate (LiTaO3 ) and other piezoelectric crystals. The IDT electrode includes a plurality of IDT electrode units 102 , and the plurality of IDT electrode units are stacked on the piezoelectric substrate 101 . figure 1 It shows that the IDT electrode includes two IDT electrode units 102 stacked, figure 2 A case where the IDT electrode includes three IDT electrode units 102 stacked is shown, but the present invention is not limited thereto.

[0035] Each IDT electrode unit includes a first buffer layer 102-1 disposed on the piezoelectric substrate and a first metal layer 102-2 disposed on the first buffer layer 102-1.

[0036] The first buffer layer 102-1 includes at least one of metal titaniu...

Embodiment 2

[0050] This embodiment provides a surface acoustic wave device, including a piezoelectric substrate 201 and an IDT electrode disposed on the piezoelectric substrate 201. The piezoelectric substrate can be quartz (SiO2), lithium niobate (LiNbO3) or lithium tantalate (LiTaO3 ) and other piezoelectric crystals. The IDT electrode includes a plurality of IDT electrode units 202 , and the plurality of IDT electrode units are stacked on the piezoelectric substrate 201 . image 3 It shows that the IDT electrode includes two IDT electrode units 202 stacked, Figure 4 A case where the IDT electrode includes three IDT electrode units 202 stacked is shown, but the present invention is not limited thereto. The arrangement of the IDT electrode units in this embodiment is the same as that in Embodiment 1.

[0051] The difference between this embodiment and the first embodiment is that the side of the IDT electrode is an inclined surface, and the angle α formed between the inclined surface ...

Embodiment 3

[0057] This embodiment provides a surface acoustic wave device, including a piezoelectric substrate 301 and an IDT electrode arranged on the piezoelectric substrate 301, the piezoelectric substrate can be quartz (SiO2), lithium niobate (LiNbO3) or lithium tantalate (LiTaO3 ) and other piezoelectric crystals. by Figure 5 As an example, in this embodiment, the IDT electrode includes two IDT electrode units, namely an IDT electrode unit 302 and an IDT electrode unit 302', the IDT electrode unit 302 is arranged on the piezoelectric substrate 301, and the IDT electrode unit 302' is arranged on The IDT electrode unit 302 is on the surface away from the piezoelectric substrate 301 .

[0058] The IDT electrode unit 302 includes a first buffer layer 302-1 disposed on the piezoelectric substrate and a first metal layer 302-2 disposed on the first buffer layer 302-1.

[0059] The first buffer layer 302-1 includes at least one of metal titanium or chromium, and when the wavelength of t...

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Abstract

The present invention proposes a surface acoustic wave device, including: a piezoelectric substrate; an IDT electrode, the IDT electrode includes a plurality of IDT electrode units, and the plurality of IDT electrode units are stacked on the piezoelectric substrate, wherein each An IDT electrode unit includes: a first buffer layer disposed on the piezoelectric substrate, the first buffer layer includes at least one of metal titanium or chromium, and the elasticity determined by the electrode period of the IDT electrode When the wavelength of the wave is set to λ, the thickness of the first buffer layer is 0.5% λ or less; the first metal layer is arranged on the surface of the first buffer layer away from the piezoelectric substrate, and the first The metal layer includes aluminum, and the thickness range of the first metal layer is between 1%λ-30%λ. According to the surface acoustic wave device of the present invention, the anti-electromigration ability of aluminum can be improved, while the maximum withstand power of the surface acoustic wave device can be improved, the durability of the surface acoustic wave device can also be improved, and the performance of the surface acoustic wave device can be taken into account. Frequency characteristics, to avoid the frequency of the surface acoustic wave device from drifting greatly with temperature changes, and to enhance temperature stability.

Description

technical field [0001] The present invention relates to the field of surface acoustic wave technology, in particular to a surface acoustic wave device. Background technique [0002] Among the key indicators of SAW filters, there are two main categories, one is small signal parameters, and the other is power indicators. Among them, the small signal parameters, namely S parameters, characterize the performance of the device in actual use, and the power index mainly refers to the maximum withstand power of the device (burning critical power). [0003] At present, the maximum withstand power supported by SAW filters can only meet the power requirements of mobile phone clients and Internet of Things clients under 4G. Under the requirements of 5G, the power requirements of frequency bands such as B41 have increased compared with 4G. As a result, the SAW filters on the market cannot meet the high power requirements of 5G. [0004] In addition, as the frequency of the device incr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/145
CPCH03H9/145
Inventor 王阳陆彬曹庭松吴洋洋
Owner 北京超材信息科技有限公司
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