Surface acoustic wave device

A surface acoustic wave and high sound velocity technology, applied in the field of surface acoustic wave devices, can solve problems such as inability to meet 5G high power requirements, reduced durability, filter failure, etc., to improve anti-electromigration ability, avoid large drift, The effect of increasing the withstand power

Active Publication Date: 2021-07-13
北京超材信息科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This has led to the inability of SAW filters on the market to meet the high power requirements of 5G
[0004] In addition, as the frequency of the device increases, the lines of the IDT (Interdigital transducer) electrodes will become thinner, and the repetitive stress from the surface acoustic wave will increase sharply with the increase of the frequency, resulting in the failure of the filter. Therefore, in the SAW filter Durability decreases as maximum withstand power increases

Method used

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Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach

[0033] (1) Embodiment one

[0034] This embodiment provides a surface acoustic wave device, including a piezoelectric substrate 101 and an IDT electrode disposed on the piezoelectric substrate 101, the piezoelectric substrate can be quartz (SiO2), lithium niobate (LiNbO3) or lithium tantalate (LiTaO3 ) and other piezoelectric crystals. The IDT electrode includes a plurality of IDT electrode units 102 , and the plurality of IDT electrode units are stacked on the piezoelectric substrate 101 . figure 1 It shows that the IDT electrode includes two IDT electrode units 102 stacked, figure 2 A case where the IDT electrode includes three IDT electrode units 102 stacked is shown, but the present invention is not limited thereto.

[0035] Each IDT electrode unit includes a first buffer layer 102-1 disposed on the piezoelectric substrate and a first metal layer 102-2 disposed on the first buffer layer 102-1.

[0036] The first buffer layer 102-1 includes at least one of metal titaniu...

Embodiment 2

[0050] This embodiment provides a surface acoustic wave device, which includes a piezoelectric substrate 201 and an IDT electrode disposed on the piezoelectric substrate 201. The piezoelectric substrate may be quartz (SiO2), lithium niobate (LiNbO3), or lithium tantalate (LiTaO3). ) is a piezoelectric crystal. The IDT electrode includes a plurality of IDT electrode units 202 , and the plurality of IDT electrode units are stacked on the piezoelectric substrate 201 . image 3 It is shown that the IDT electrode includes two IDT electrode units 202 stacked, Figure 4 The case where the IDT electrode includes three IDT electrode units 202 stacked is shown, but the present invention is not limited to this. The arrangement of the IDT electrode unit in this embodiment is the same as that of the first embodiment.

[0051] The difference between this embodiment and the first embodiment is that the side surface of the IDT electrode is an inclined surface, and the angle α formed by the ...

Embodiment 3

[0057] This embodiment provides a surface acoustic wave device, which includes a piezoelectric substrate 301 and an IDT electrode disposed on the piezoelectric substrate 301. The piezoelectric substrate may be quartz (SiO2), lithium niobate (LiNbO3), or lithium tantalate (LiTaO3). ) is a piezoelectric crystal. by Figure 5 As an example, in this embodiment, the IDT electrode includes two IDT electrode units, which are an IDT electrode unit 302 and an IDT electrode unit 302' respectively. The IDT electrode unit 302 is provided on the piezoelectric substrate 301, and the IDT electrode unit 302' is provided on the piezoelectric substrate 301. The IDT electrode unit 302 is on the surface away from the piezoelectric substrate 301 .

[0058] The IDT electrode unit 302 includes a first buffer layer 302-1 provided on the piezoelectric substrate and a first metal layer 302-2 provided on the first buffer layer 302-1.

[0059] The first buffer layer 302-1 includes at least one of metal...

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Abstract

The invention provides a surface acoustic wave device. The surface acoustic wave device comprises a piezoelectric substrate; the IDT electrode comprises a plurality of IDT electrode units, the plurality of IDT electrode units are stacked on the piezoelectric substrate, each IDT electrode unit comprises a first buffer layer, the first buffer layer is arranged on the piezoelectric substrate, the first buffer layer comprises at least one of metal titanium or chromium, and the second buffer layer comprises at least one of metal titanium or chromium; the thickness of the first buffer layer is 0.5% lambda or less, where lambda is the wavelength of an elastic wave determined by the electrode period of the IDT electrode. And the first metal layer is arranged on the surface, away from the piezoelectric substrate, of the first buffer far layer, the first metal layer comprises aluminum, and the thickness of the first metal layer ranges from 1% lambda to 30% lambda. According to the surface acoustic wave device, the electromigration resistance of aluminum can be improved, the durability of the surface acoustic wave device can be improved while the maximum tolerance power of the surface acoustic wave device is improved, the frequency characteristic of the surface acoustic wave device can be considered, and the situation that the frequency of the surface acoustic wave device drifts greatly along with the temperature change is avoided. The temperature stability is enhanced.

Description

technical field [0001] The present invention relates to the field of surface acoustic wave technology, in particular to a surface acoustic wave device. Background technique [0002] Among the key indicators of SAW filters, there are two main categories, one is small signal parameters, and the other is power indicators. Among them, the small signal parameters, namely S parameters, characterize the performance of the device in actual use, and the power index mainly refers to the maximum withstand power of the device (burning critical power). [0003] At present, the maximum withstand power supported by SAW filters can only meet the power requirements of mobile phone clients and Internet of Things clients under 4G. Under the requirements of 5G, the power requirements of frequency bands such as B41 have increased compared with 4G. As a result, the SAW filters on the market cannot meet the high power requirements of 5G. [0004] In addition, as the frequency of the device incr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/145
CPCH03H9/145
Inventor 王阳陆彬曹庭松吴洋洋
Owner 北京超材信息科技有限公司
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