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Quantum dot light emitting diode, preparation method thereof, display panel and display device

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems that the luminous efficiency and luminous purity of quantum dot light-emitting diodes need to be improved.

Pending Publication Date: 2021-07-02
义乌清越光电技术研究院有限公司 +2
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  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the problem that the luminous efficiency and luminous purity of quantum dot light-emitting diodes need to be improved in the prior art, thereby providing a quantum dot light-emitting diode and its preparation method, display panel and display device

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  • Quantum dot light emitting diode, preparation method thereof, display panel and display device
  • Quantum dot light emitting diode, preparation method thereof, display panel and display device
  • Quantum dot light emitting diode, preparation method thereof, display panel and display device

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Embodiment Construction

[0026] As mentioned in the background art, the electroluminescence efficiency and luminescence purity of quantum dot light-emitting diodes in the prior art need to be improved.

[0027] The inventors have found through long-term research that in the QLED device structure, due to the deep energy level of the quantum dots, there is a large injection barrier between the quantum dot layer and the hole transport layer, which makes the internal carriers not balanced enough, affecting Luminous efficiency of the device.

[0028] To this end, a QLED device structure is proposed. The quantum dot light-emitting layer of the composite material formed by TADF material and quantum dot material is used. The TADF material combines the two through the condensation reaction of amino and carboxyl groups to obtain an inorganic-organic composite material. However, both the TADF material and the quantum dot material in the above structure participate in light emission, and the center wavelengths o...

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Abstract

The invention provides a quantum dot light emitting diode, a preparation method thereof, a display panel and a display device. The quantum dot light-emitting diode comprises a quantum dot light-emitting layer, wherein the material of the quantum dot light-emitting layer comprises a mixture of a carrier transport host material and a quantum dot object light-emitting material; the energy level of the highest occupied molecular orbital of the carrier transport host material is 0.1 eV to 1 eV higher than the energy level of the valence band top of the quantum dot object luminescent material; and the mass ratio of the carrier transport host material to the quantum dot object light-emitting material in the quantum dot light-emitting layer is 1: 1-9: 1. The light-emitting efficiency and the light-emitting purity of the quantum dot light-emitting diode are improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a quantum dot light-emitting diode and a preparation method thereof, a display panel and a display device. Background technique [0002] An organic light-emitting diode (Organic Light-Emitting Diode, OLED for short) display is also called an organic electroluminescence display. Compared with the existing liquid crystal display, it has a series of advantages such as self-illumination, wide viewing angle, ultra-light, ultra-thin, high brightness, low power consumption and fast response, and the response speed can reach 1000 times that of liquid crystal display, so , OLED display has become a very popular flat-panel display product at home and abroad, and has broad application prospects. The structure of the OLED display includes: a substrate glass; an anode, an organic functional layer and a cathode stacked on the substrate glass; and a cover plate encapsulated on the glass subst...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56H01L27/32
CPCH10K59/00H10K50/11H10K2101/40H10K50/115H10K71/00
Inventor 唐鹏宇穆欣炬马中生李流民刘高鹏刘航
Owner 义乌清越光电技术研究院有限公司
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