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A crystal processing device and method

A technology for processing devices and crystals, applied to fine working devices, working accessories, manufacturing tools, etc., can solve the problems of unusable cutting surfaces, low efficiency, waste of labor, etc., to improve cracking efficiency, reduce the number of collisions, and observe the results Accurate and objective effect

Active Publication Date: 2022-08-02
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, diamond saw blades are usually used to cut silicon carbide crystals, and the obtained silicon carbide crystal cutting surface has obvious cutting marks, which makes the cutting surface unusable; in addition, due to the high hardness of silicon carbide crystals, it needs to be cut many times, and the efficiency is low. Low; and the cutting process is carried out manually, wasting a lot of labor

Method used

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  • A crystal processing device and method
  • A crystal processing device and method
  • A crystal processing device and method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] like Figure 1-4 As shown, embodiments of the present application disclose a crystal processing apparatus, which includes a frame and a collision assembly. Wherein, a base 1 is installed on the frame, and a clamping mechanism for clamping the crystal is arranged on the base 1, and the clamping mechanism includes a first opening 2; the collision assembly is arranged on the outer side of the clamping mechanism, and the collision assembly includes a first opening 2. The collision piece and the first power mechanism 3, the first power mechanism 3 is used to drive the first collision piece to move, and passes through the first opening 2 to strike the crystal until the crystal is cracked. By setting a clamping mechanism, the crystal is fixed to prevent the crystal from sliding when it is subjected to a large collision force, so as to ensure the successful cracking of the crystal; by setting the first power mechanism 3 to drive the first collision piece to move, so that the fi...

Embodiment approach

[0071]As an embodiment, the clamping mechanism includes a first clamping member 13 and a second clamping member 14. The first clamping member 13 and the second clamping member 14 are respectively installed on the base 1. The base 1, the second clamping member 14 A holding member 13 and a second holding member 14 form an accommodating cavity for placing the crystal, and the gap between the first holding member 13 and the second holding member 14 forms a first opening 2 and a second opening 6 respectively; At least one of the first clamp 13 and the second clamp 14 is capable of adjusting the relative position with respect to the other. By arranging at least one of the first clamping member 13 and the second clamping member 14 to be able to adjust the relative position relative to the other, the crystal processing device can be used to process crystals of different sizes, and the applicability of the crystal processing device is improved. sex.

[0072] Specifically, in order to ...

Embodiment 2

[0079] Embodiment 2 of the present application provides a crystal processing method, which can be implemented by using the crystal processing device provided in Embodiment 1, including the following steps:

[0080] (1) Open the pressing plate 15, place the crystal in the accommodating cavity, overlap the center line of the crystal with the heating wire 10, and make the first clamping member 13 and the second clamping member 14 cooperate with each other to clamp the crystal;

[0081] (2) Start the heating motor 12 so that the heating rate of the heating wire 10 is 0.8-3°C / s, and heat the center line of the crystal. When the center line of the crystal rises to a certain temperature, turn off the motor,

[0082] Wherein, when 10°C≤T≤50, the difference between the central line temperature of the crystal after heating and the initial temperature of the crystal is 30-300°C, where T is the initial temperature of the crystal; or when T>50°C, after heating The difference between the ce...

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Abstract

The present application discloses a crystal processing device and method, belonging to the technical field of crystal processing. The crystal processing device includes: a frame on which a base is installed, a clamping mechanism for clamping the crystal is arranged on the base, and the clamping mechanism includes a first opening; a collision assembly, the The collision assembly is arranged on the outer side of the clamping mechanism, and the collision assembly includes a first collision piece and a first power mechanism, and the first power mechanism is used for driving the first collision piece to move, and passes through the first collision piece. An opening to hit the crystals until the crystals crack. The crystal processing device does not touch the fracture surface of the crystal when processing the crystal, so no cutting marks are left, and a clear section can be obtained, so that the internal structure of the crystal can be observed more clearly, and the observation result is more accurate and objective.

Description

technical field [0001] The present application relates to a crystal processing device and method, in particular to a silicon carbide crystal processing device and method, belonging to the technical field of crystal processing. Background technique [0002] With the rapid development of 5G communication, new energy vehicles and other industries, the demand for power electronic devices continues to increase. Silicon carbide crystal has excellent properties such as wide band gap, high thermal conductivity, high critical breakdown field strength and high saturation electron drift rate. physical properties are concerned. In the actual production process, the prepared silicon carbide crystal needs to be cut to check the internal state and see if it can meet the standard for later application. [0003] At present, the silicon carbide crystal is usually cut with a diamond saw blade, and the obtained silicon carbide crystal cutting surface has obvious cutting marks, which makes the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/00B28D7/00B28D7/04
CPCB28D5/0005B28D5/0058B28D5/0052
Inventor 沈安宇湛希栋张耀文李磊磊张亮
Owner SICC CO LTD
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