Method for improving stress resistance of chip solid electrolytic capacitor

Abstract

The invention belongs to the technical field of electronic components, and particularly relates to a method for improving stress resistance of a chip solid electrolytic capacitor. The method comprises anode design and cathode coating strengthening treatment. According to the anode design, the edge of an anode tantalum block in the height direction is chamfered, and the right-angle edge is changed into an arc shape. And the cathode coating strengthening treatment is that an anode tantalum block on which a dielectric layer is formed is subjected to manganese nitrate solution decomposition and strengthening treatment for multiple times to form a manganese dioxide layer. According to the method provided by the invention, the manganese dioxide layer with uniform thickness and high density can be formed on the surface of a tantalum anode, so the phenomena of stress concentration and local weakness in the tantalum anode processing process are eliminated. The tantalum anode prepared by the invention can improve the stress impact resistance of a chip-type solid electrolyte tantalum capacitor, such as heat stress resistance and mechanical stress, and improve the welding performance of the chip-type solid electrolyte tantalum capacitor; and the method can be used for manufacturing the chip-type solid electrolyte tantalum capacitor product with strong stress resistance and high reliability, and the application range of the capacitor is expanded.

Description

technical field [0001] The invention belongs to the technical field of electronic components, in particular to a method for improving the stress resistance of chip solid electrolytic capacitors. Background technique [0002] At present, with the rapid development of integrated circuit technology and the continuous improvement of surface mount technology, as the most widely used electronic components in electronic circuits, the welding conditions of chip solid electrolyte tantalum capacitors are constantly improving, and the welding temperature is as high as 350°C. Secondary welding conditions have become the norm. [0003] The ability to withstand thermal stress, mechanical stress and other stress shocks during the welding process of chip solid electrolytic capacitors is closely related to the density and uniformity of the cathode manganese oxide layer. The more uniform the thickness and density of the manganese dioxide layer, the higher the thermal stress resistance. , Mec...

AI Technical Summary

Problems solved by technology

This patent technology discloses that chamfering the tantalum core is beneficial to solve the problem of stress concentration in the preparation process of the tantalum core, but it does not solve the problem of poor density and uniformity of the cathode manganese dioxide layer

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