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Quantum dot material and preparation method thereof, quantum dot film, backlight module and display equipment

A technology of quantum dot material and quantum dot film, applied in the field of liquid crystal display, can solve the problem of high cost

Pending Publication Date: 2021-06-15
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And the existing quantum dot enhanced film needs water and oxygen barrier film, the cost is high

Method used

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  • Quantum dot material and preparation method thereof, quantum dot film, backlight module and display equipment
  • Quantum dot material and preparation method thereof, quantum dot film, backlight module and display equipment
  • Quantum dot material and preparation method thereof, quantum dot film, backlight module and display equipment

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preparation example Construction

[0022] In the first aspect, the embodiment of the present application provides a method for preparing a quantum dot material, including: encapsulating the quantum dot with an oxide by using an inverse microemulsion method to obtain quantum dot / oxide particles. Quantum dots / oxide particles are coated with polymers by dispersion polymerization to obtain quantum dots / oxide / polymer particles, which are quantum dot materials.

[0023] In some embodiments of the present application, the preparation steps of quantum dots / oxide particles include: sequentially mixing and reacting quantum dot solution with dispersant, linker, amphoteric solvent, water, and oxide precursor, and precipitating to obtain a precipitate.

[0024] The quantum dots used in the present application are quantum dots formed of II B group elements and VI A group elements and / or quantum dots formed of III A group elements and V A group elements. Wherein, the II B group element can be cadmium or zinc, the VI A group e...

Embodiment 1

[0059] This embodiment provides a quantum dot material CdSe@ZnS / SiO 2 / PS and preparation method thereof, including:

[0060] Quantum dots CdSe@ZnS coated with silica.

[0061] 1. Add 170 μl of quantum dot chloroform solution (concentration 120 mg / ml) into 20 ml of cyclohexane to prepare a solution with a quantum dot concentration of 1 mg / ml.

[0062] 2. Add 10 μl of mercaptopropyltriethoxysilane (MPTS) to the above solution, stir for 30 minutes, and rotate at 500 rpm.

[0063] 3. Continue to add 2.4ml nonylphenol polyoxyethylene ether (NP-5), and keep stirring for 1 hour.

[0064] 4. Add 100 μl of ammonia water, keep stirring, and add 350 μl of tetraethyl silicate (TEOS) dropwise within 7 hours.

[0065] 5. Continue stirring for 9 hours, then add 25ml of ethanol to stop the reaction. Centrifuge at 7000 rpm for 3 minutes to separate the precipitate, discard the supernatant, and collect the precipitate.

[0066] 6. Add 20ml of ethanol to the precipitate, sonicate for 30min...

Embodiment 2

[0075] This embodiment provides a quantum dot material CdSe@ZnSe / TiO 2 / PS and preparation method thereof, including:

[0076] Quantum dots CdSe@ZnSe coated with titanium dioxide.

[0077] 1. Add 250 μl of quantum dot chloroform solution (concentration: 120 mg / ml) into 20 ml of cyclohexane to prepare a solution with quantum dot concentration of 1.5 mg / ml.

[0078] 2. Add 15 μl of mercaptopropyltriethoxysilane (MPTS) to the above solution, stir for 40 minutes, and rotate at 600 rpm.

[0079] 3. Continue to add 2.6ml of nonylphenol polyoxyethylene ether (NP-5), and continue to stir for 1 hour.

[0080] 4. Add 100 μl of ammonia water, keep stirring, and add 400 μl of tetrabutyl titanate (TBT) dropwise within 8 hours.

[0081]5. Continue stirring for 10 hours, then add 30ml of ethanol to stop the reaction. Centrifuge at 7500 rpm for 3.5 min to separate the precipitate, discard the supernatant, and retain the precipitate.

[0082] 6. Add 25ml of ethanol to the precipitate, son...

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Abstract

The invention relates to a quantum dot material and a preparation method thereof, a quantum dot film, a backlight module and display equipment, which belong to the technical field of liquid crystal display. The preparation method of the quantum dot material comprises the following steps of carrying out oxide coating on quantum dots by adopting a reversed-phase microemulsion method to obtain quantum dot / oxide particles, and carrying out polymer wrapping on the quantum dot / oxide particles by adopting a dispersion polymerization method to obtain the quantum dot material. The quantum dots are coated with oxides and polymers by adopting a reversed-phase microemulsion method and a dispersion polymerization method, and the surfaces of the quantum dots can be tightly coated with the oxides by adopting the reversed-phase microemulsion method, so that the quantum dot / oxide particles are good in morphology structure and particle size uniformity and good in water and oxygen barrier property. And on the basis, the polymer is coated, so that the polymer has good coating property, the scattering effect intensity of light is uniformly distributed, and the obtained quantum dot / oxide / polymer particles have better water and oxygen barrier property.

Description

technical field [0001] The present application relates to the technical field of liquid crystal display, and particularly relates to a quantum dot material and a preparation method thereof, a quantum dot film, a backlight module and a display device. Background technique [0002] The diffusion film makes the light with uneven intensity distribution become uniform in intensity distribution through the scattering effect of the diffusion particles on the light. The function of the quantum dot enhancement film is to complete the conversion of light wavelength, which can convert blue light into green light and red light, and mix blue light with green light and red light to obtain white light. In order to obtain white light with uniform light intensity distribution, the existing technology is to superimpose the quantum dot enhancement film and the diffusion film, that is, two kinds of films are required. Moreover, the existing quantum dot-enhanced film needs a water-oxygen barrie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/13357C08F112/08C08F2/44C08K3/30C08K3/36
CPCG02F1/133606C08F112/08C08F2/44C08K3/30C08K3/36
Inventor 骆意勇李必兴管子豪
Owner 合肥福纳科技有限公司
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