Method for simultaneously measuring multiple physical parameters of dielectric film

Abstract

The invention relates to a method for simultaneously measuring multiple physical parameters of a dielectric film. Physical parameters, such as defect density, dielectric constant and electron mobility, of a film are indirectly measured according to transmission current, electron beam induced current and surface potential under electron beam irradiation. According to the basic idea, the corresponding transmission current, electron beam induction current and surface potential are obtained through numerical calculation according to a given dielectric film, given electron beam irradiation conditions, trap density, electron mobility and dielectric constant; a non-linear relationship between the multiple physical parameters and the transmission current, the electron beam induced current and the surface potential is established based on an Elman artificial neural network; and finally, the transmission current, the electron beam induced current and the surface potential of a to-be-measured object are measured in an experiment, and finally multiple physical parameters are obtained through the Elman network. The method has the advantages of being reliable in measurement, high in measurement speed and low in measurement cost.

Description

technical field [0001] The invention belongs to the technical field of dielectric thin film measurement, and in particular relates to a method for simultaneously measuring multiple physical parameters of a dielectric thin film. Background technique [0002] Dielectric thin films are widely used in microelectronic devices and space devices. These dielectric materials need to be selected in the preparation of various devices. The most critical thing is that the physical parameters of the materials must meet the requirements, such as the trap density, dielectric constant, and electron mobility of the film. However, due to the influence of growth environment and processing conditions, the physical parameters and properties of dielectric materials will be significantly different. Therefore, in order to ensure the performance of the device, it is necessary to accurately measure the physical parameters related to the dielectric film. Traditional measurement methods include radio ...

AI Technical Summary

Problems solved by technology

Among them, the radio frequency impedance measurement method can only measure the dielectric constant, and is easily affected by temperature, humidity, and operating frequency

In addition, the traditional solid dielectric trap parameter measurement device and measurement method with DC excitation current can only measure trap parameters, and the experimental conditions are complex

However, the traditional transmission electron microscope technology is generally used to detect the internal structure of the sample, which is expensive and not suitable for the measurement of thin film parameters.

The common disadvantages of the above methods are that the measurement method is complicated, the cost is high, and it takes a long time to measure, so it is not suitable for rapid measurement at industrial sites.

[0003] Aiming at the problem that it is difficult to measure the multiple physical parameters of the dielectric thin film accurately and simultaneously, the present invention provides a new simultaneous measurement method for the multi-physical parameters of the dielectric thin film based on the electrification theory of the electron beam irradiated dielectric

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