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Tungsten oxide-based memristor embedded with Ti or Al nano island array and preparation method of tungsten oxide-based memristor

A technology of tungsten oxide and memristor, which is applied in the direction of electrical components, etc., can solve the problems of high working voltage, large variation range of device performance parameters, and restrictions on the application of memristor devices

Inactive Publication Date: 2021-06-11
AFFILIATED HOSPITAL OF GUILIN MEDICAL UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, current memristors generally require a forming process, high operating voltage, and a wide range of device performance parameters, which greatly limit the application of memristor devices.

Method used

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  • Tungsten oxide-based memristor embedded with Ti or Al nano island array and preparation method of tungsten oxide-based memristor
  • Tungsten oxide-based memristor embedded with Ti or Al nano island array and preparation method of tungsten oxide-based memristor
  • Tungsten oxide-based memristor embedded with Ti or Al nano island array and preparation method of tungsten oxide-based memristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] (1) Put a two-inch silicon wafer into acetone, isopropanol and absolute ethanol in turn for 5 min, respectively, take it out, wash it with water three times, and use an air gun (N 2 ) to dry, and put it on the drying table to dry the water.

[0047] (2) Put the cleaned silicon wafer into the furnace of the plasma-enhanced chemical vapor deposition instrument, heat it at 300°C for 5′30″, and grow 300nm silicon oxide on the surface of the silicon wafer to obtain SiO 2 / Si.

[0048] (3) SiO 2 / Si is placed in the chamber of the magnetron sputtering instrument, with metal Ti as the target material, the sputtering power is 150W, the sputtering time is 1230s, the sputtering gas environment is Ar, and a 100nm Ti layer is deposited by DC sputtering to obtain Ti / SiO 2 / Si. Using metal Pt as the target material, the sputtering power is 60W, the sputtering time is 740s, the sputtering gas environment is Ar, and a 100nm Pt layer is deposited by DC sputtering to obtain Pt / Ti / ...

Embodiment 2

[0056] Embodiment 2 (comparative example)

[0057] Other steps are with embodiment 1, the Pt / Ti / SiO that makes in the present embodiment 2 / Si without the transfer of ultra-thin AAO, a 5nm thick Ti layer was directly deposited to produce WO with a photolithographic pattern x / Ti / Pt / Ti / SiO 2 / Si devices.

[0058] Through XRD analysis, it was found that the Ti embedded in the device was partially oxidized to form TiO x ( image 3 ). According to the XPS analysis, with the voltage sweep cycle, the WO in the device (2.57) containing Ti nano-islands x The ratio of oxygen vacancies to lattice oxygen in the layer is higher than ( Figure 7 A, B). The I-V cycle curve is tested by a semiconductor parameter analyzer, and the accumulated probability statistics of the data obtained from the test are obtained to determine the WO x When the Pt electrode of the / Ti / Pt device is scanned with a voltage of -2V, the forming process of the device occurs at -1.6V ( Figure 5 C), V SET an...

Embodiment 3

[0060] The other steps are the same as in Example 1. In this example, the Ti target in step (6) is replaced by an Al target, still using The rate of deposition is 250s. Finally, a WO with a photolithographic pattern is obtained x / Al NI / Pt / Ti / SiO 2 / Si devices.

[0061] Test its I-V cycle curve by a semiconductor parameter analyzer. Through the electrical performance test, WO x The / Al NI / Pt device does not require the Forming process and has a negative differential resistance phenomenon ( Figure 8 A). V SET and V RESET The average values ​​are -0.59V and 0.51V, and the coefficients of variation are 3.36% and 1.86%, V SET and V RESET The coefficient of variation and WO x / Ti NI / Pt devices are similar, with a small scatter ( Figure 8 B).

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Abstract

The invention discloses a preparation method of a tungsten oxide-based memristor embedded with a Ti or Al nano island array, which adopts a magnetron sputtering method, takes Pt metal as a target material, and deposits Pt with the thickness of 100nm as a bottom electrode. Ti or Al with the thickness of 5nm is deposited by adopting an electron beam evaporation method, and a highly ordered Ti or Al nano island array is prepared by virtue of an ultrathin AAO template. The average diameter of the Ti nano islands is 57.7 nm, and the average distance between centers of the islands is 100.2 nm. And WOx (x is equal to 2.2-2.5) with the thickness of 30nm is deposited by using a magnetron sputtering method and taking WOy (y is equal to 2.7-2.9) as a target material to prepare WOx / Ti NI / Pt and WOx / Al NI / Pt devices. The invention provides the preparation method of the tungsten oxide-based memristor embedded with the Ti or Al nano island array, the Forming (electroforming) process is avoided, the resistance change voltage dispersion is low, and compared with the photoetching technology, the cost is lower.

Description

technical field [0001] The invention relates to the technical field of memory preparation, in particular to a tungsten oxide-based memristor embedded with a Ti or Al nano-island array and a preparation method thereof. Background technique [0002] Metal-oxide-metal sandwich structure memristive devices have significant advantages such as low power consumption and easy integration, and their applications in information storage and neuromorphic circuit simulation are becoming more and more extensive. The application requirements of memristive devices are first, low forming voltage, and second, low resistive voltage and low dispersion of resistive voltage. The forming voltage is low or the forming process is not required, which can greatly expand the application range of the memristive device and reduce the peripheral circuits. The low resistive variable voltage can reduce the power consumption of the device, which is beneficial to large-scale integration and application. The...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/8833H10N70/026H10N70/011
Inventor 王丽萍董江辉曲兆珠张宝林
Owner AFFILIATED HOSPITAL OF GUILIN MEDICAL UNIV
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