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Microwave dielectric ceramic material and preparation method thereof

A technology of microwave dielectric ceramics and matrix materials, applied in the field of microwave dielectric ceramics, can solve the problems of high sintering temperature, hindering the practical application of ceramics, and poor thermal shock resistance of ceramics

Inactive Publication Date: 2021-06-04
无锡市高宇晟新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Zinc silicate dielectric ceramic is one of the important low dielectric ceramic materials, Zn 2 SiO 4 Ceramics have excellent electrical properties (εr~6.6, Q×f~219000GHz), but the temperature coefficient of resonance frequency is too negative (-61ppm / ℃), and the sintering temperature is high (≥1300℃); in Zn 2 SiO 4 Ceramic doped with 11wt% TiO 2 After that, the temperature coefficient of its resonant frequency can be adjusted to near zero (~1ppm / ℃), but due to Zn 2 SiO 4 and TiO 2 The thermal expansion coefficients of the two phases differ greatly, resulting in the Zn 2 SiO 4 Ceramic doped with 11wt% TiO 2 Finally, the thermal shock resistance of ceramics is poor, which seriously hinders the Zn 2 SiO 4 Practical Applications of Ceramics

Method used

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  • Microwave dielectric ceramic material and preparation method thereof
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  • Microwave dielectric ceramic material and preparation method thereof

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preparation example Construction

[0038] The embodiment of the present invention also provides the preparation method of the above-mentioned microwave dielectric ceramic material, refer to figure 1 , the preparation method comprises:

[0039] S10, mixing: the Zn 2 SiO 4 The mixture of the base material and the modifying additive is placed in a ball mill for wet ball milling to obtain a mixed slurry.

[0040] Wherein, based on the total mass of the microwave dielectric ceramic material, the mass percentage of the base material is 82%-90%, and the mass percentage of the modifying additive is 10%-18%.

[0041] Preferably, the Zn 2 SiO 4 The preparation of the base material includes:

[0042] Ingredients: the raw materials ZnO and SiO 2 The mixture prepared according to the stoichiometric ratio (2:1) is placed in a ball mill for wet ball milling to obtain the first slurry;

[0043] Pre-burning: the first slurry is dried and sieved, then placed in a high-temperature furnace for pre-burning, and the Zn 2 SiO...

Embodiment 1

[0053] Example 1: Zn 2 SiO 4 Preparation of matrix material

[0054] The raw materials ZnO and SiO 2 According to Zn 2 SiO 4 The stoichiometric ratio (2:1) was prepared to obtain a mixture, and the mixture was wet ball milled for 10 hours, dried, and sieved to obtain a mixed powder; wherein, the mass ratio of raw material mixture, ball milling beads, and deionized water was 1:3: 5. The mass ratio of ball milling beads with diameters of 3mm, 5mm and 8mm is 1:1:1;

[0055] Put the mixed powder into a high-temperature box furnace and pre-fire at 1100°C for 3 hours, then ball mill the pre-fired powder for 10 hours, dry and sieve to obtain the main powder Zn 2 SiO 4 . figure 2 is the Zn of the microwave dielectric ceramic material provided in the above embodiment 1 2 SiO 4 The X-ray diffraction pattern of the base material, from figure 2 It can be known that the raw materials ZnO and SiO 2 Zn was successfully prepared 2 SiO 4 The main powder of the phase.

Embodiment 2~6

[0057] In embodiment 2~6, the Zn of each embodiment 2 SiO 4 The mass percentages of matrix material and various modification additives are shown in Table 1, wherein, the Zn 2 SiO 4 The base material is the base material prepared in Example 1.

[0058] Table 1: Zn 2 SiO 4 Mass percentage of matrix material and various modifying additives

[0059] Composition (wt%) Zn 2 SiO 4

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Abstract

The invention provides a microwave dielectric ceramic material. The microwave dielectric ceramic material comprises the following components in percentage by mass: 82-90% of a base material and 10-18% of a modified additive, wherein the matrix material is Zn2SiO4, the modified additive comprises a first additive TiO2, one or two of second additives Al2O3 and Co2O3, one or two of third additives MgO and SiO2, and a fourth additive MnCO3. The microwave dielectric ceramic material provided by the invention has the excellent properties of low dielectric constant, high quality factor, high thermal shock resistance and near-zero temperature coefficient of resonance frequency, is relatively low in sintering temperature, and can adapt to the application of various devices and the use requirements of the devices in a cross-regional climatic environment. In addition, the preparation method of the microwave dielectric ceramic material provided by the invention has the characteristics of simple and convenient process and easiness in batch production.

Description

technical field [0001] The invention belongs to the technical field of microwave dielectric ceramics, in particular to a microwave dielectric ceramic material and a preparation method thereof. Background technique [0002] With the rapid development of communication technology, the communication frequency used has increased significantly, which requires communication devices (filters, duplexers, etc.) to achieve high frequency, miniaturization, and temperature stability. As a result, microwave dielectric ceramic devices have become one of the main solutions for communication equipment manufacturers to deploy 5G. The loss in the wireless communication process mainly comes from the loss caused by the microwave dielectric ceramic itself. In order to meet the requirements of high-performance information technology and microwave devices, it has a low dielectric constant εr, a high quality factor Q×f, and a near-zero resonance frequency. Materials with temperature coefficient τf ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622C04B35/638
CPCC04B35/453C04B35/622C04B35/638C04B2235/3418C04B2235/3275C04B2235/3232C04B2235/3217C04B2235/3206C04B2235/3262C04B2235/6567C04B2235/94
Inventor 黄庆焕彭仕强叶荣顾国治艾晨霞
Owner 无锡市高宇晟新材料科技有限公司
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