Double-sided plasma enhanced chemical vapor deposition structure and deposition device

Abstract

The invention discloses a double-sided plasma enhanced chemical vapor deposition structure. The structure comprises a box body as well as a gas box mechanism, an electrode mechanism and a carrier which are arranged in a cavity of the box body; the gas box mechanism is used for introducing gas, the electrode mechanism is connected with the gas box mechanism and is used for ionizing the gas in the gas box mechanism, the carrier is located on the side, away from a gas inlet of the gas box mechanism, of the box body, a groove body structure with an upward opening is formed in the carrier, the groove body structure is arranged in a front-back penetrating mode in the front-back direction of the box body, the groove body structure is provided with a first bearing surface and a second bearing surface which are used for bearing workpieces, the carrier is arranged on the box body in a swinging mode and drives the workpieces to be switched between the first bearing surface and the second bearing surface, and the box body is provided with an extraction opening connected with the output end of a deposition chamber. Therefore, the double-sided plasma enhanced chemical vapor deposition structure has the advantages of excellent deposition effect and high efficiency. The invention further provides a deposition device.

Description

technical field [0001] The invention relates to a double-sided plasma-enhanced chemical vapor deposition structure, in particular to a double-sided plasma-enhanced chemical vapor deposition structure capable of simultaneously ionizing multiple different gases. Background technique [0002] With the rapid development of economic construction, microelectronics technology has developed rapidly, and the development and use of plasma enhanced chemical vapor deposition (English full name: Plasma Enhanced Chemical Vapor Deposition; abbreviation: PECVD) equipment is also becoming more and more extensive. PECVD equipment is a device that uses high-frequency power source glow discharge to generate plasma chemical deposition. Due to the existence of plasma, the deposition temperature is reduced. At present, PECVD equipment is widely used in liquid crystal display industry, solar cell industry, semiconductor device and large-scale integrated circuit manufacturing industry, etc. [0003...

AI Technical Summary

Problems solved by technology

[0004]At present, the existing ionization devices usually can only ionize one gas at the same time. When it is necessary to deposit multiple layers on the substrate in sequence, the deposited The substrate of one layer is moved to another ionization device to deposit another material, or wait for the substrate to be completely deposited and then pass through another gas to deposit another material, regardless of the deposition method and means used, They all deposit one layer before depositing another layer. When it is necessary to deposit multiple layers on the substrate, repeated operations are required. The deposition efficiency is low and the operation is cumbersome.

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