HJT battery based on double-layer transparent conductive oxide film and preparation method of HJT battery
An oxide thin film, transparent conductive technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low battery conversion efficiency, and achieve the effect of improving yield and preparation efficiency, reducing sputtering damage, and high conversion efficiency.
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[0035] A method for preparing an HJT battery based on a double-layer transparent conductive oxide film, comprising the following steps:
[0036] S1. Prepare an intrinsic amorphous silicon layer 2 on the light-receiving surface and the backlight surface of the N-type silicon wafer 1 respectively.
[0037] S2. Prepare an N-type doped amorphous silicon layer 3 and a P-type doped amorphous silicon layer 4 sequentially on the intrinsic amorphous silicon layer 2 on the light-receiving surface and the backlight surface of the N-type silicon wafer 1 .
[0038] S3. Prepare the first transparent conductive oxide layer 5 on the N-type doped amorphous silicon layer 3 and the P-type doped amorphous silicon layer 4 by using a DC magnetron sputtering process, wherein the process parameters of the DC magnetron sputtering process It is: the pressure is 0.5Pa, the deposition temperature is 100°C, the target is ITO (97:3), the gas introduced into the process is argon and oxygen, the flow rate of a...
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