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A kind of growth method of monocrystalline silicon and monocrystalline silicon

A growth method, single crystal silicon technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as difficulty in accurate prediction of dopant concentration, reduction of crystal ratio, deviation of crystal resistivity, etc., to improve products Pass rate, prevention of deviation from target value, effect of precise control

Active Publication Date: 2021-06-04
杭州晶宝新能源科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During the complete cycle of the crucible, due to the complex growth program and growth parameters such as furnace chamber pressure, temperature, time, etc., the volatilization of dopant atoms is significantly affected, making it extremely difficult to accurately predict the dopant concentration in the melt
The deviation of dopant concentration will cause the actual resistivity of the crystal to deviate from the target value, reducing the proportion of compliant crystals

Method used

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  • A kind of growth method of monocrystalline silicon and monocrystalline silicon
  • A kind of growth method of monocrystalline silicon and monocrystalline silicon
  • A kind of growth method of monocrystalline silicon and monocrystalline silicon

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Embodiment 1

[0040] This embodiment proposes a method for growing single crystal silicon, comprising the following steps:

[0041] A single crystal silicon crystal with a diameter of 262 mm was grown by the Chess pulling method. 600kg of high-purity polysilicon is loaded into a high-purity quartz crucible, the design resistivity of the head is 1.1Ωcm, and 49.2g of high-purity metal gallium (dopant) is added. Under the protection of inert gas, the raw materials are melted to obtain a stable melt. Enter the seeding, necking, shouldering and equal-diameter growth procedures, and enter the finishing procedure when the crystal length is controlled to be about 330cm (the tail resistivity is about 0.4Ω㎝). At the end of the finishing stage, the temperature of the melt was increased, and the crystal pulling speed was increased to form a thin neck with a diameter of about 3 mm. When the thin neck grows stably at about 20mm, a small crystal with a diameter of 25.4mm is grown on the shoulder, and when...

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Abstract

The invention discloses a single crystal silicon growth method and the single crystal silicon, and relates to the technical field of single crystal silicon. The growth method of monocrystalline silicon, including: placing a set amount of polysilicon raw material and dopant in a growth container, using the pulling method for crystal growth, and continuing to grow a crystal to be tested at the end of the final stage, and passing the test of the crystal to be tested Calculate the concentration of the dopant in the remaining material of the growth vessel, and then calculate the supplementary amount of the dopant according to the concentration of the dopant in the remaining material, so as to supplement the concentration of the dopant to the set value for the next step crystal growth. It can more accurately test the concentration of dopant in the remaining material, so as to accurately control the concentration of dopant in the growth container before the next crystal growth, so that the resistivity of the crystal can be controlled more accurately, and to a certain extent prevent the crystal resistivity Deviate from the target value and increase the product qualification rate.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon, in particular to a method for growing single crystal silicon and single crystal silicon. Background technique [0002] At present, the Czochralski (Czochralski) pulling method is the mainstream method for preparing single crystal silicon crystals. In this method, high-purity polysilicon raw materials are added to a quartz crucible for melting, and seed crystals are used to seed crystals, and the crystals are gradually extracted from the melt through precise control. Large-sized single crystals grow. The growth procedure includes seeding, necking, shouldering, isometric growth and finishing procedures, and the complete process takes dozens of hours. [0003] In order to reduce production costs, the industry usually refills polysilicon raw materials in the crucible after growing a crystal to grow new crystals, so as to increase the utilization times of the crucible, so that the serv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/04C30B15/20C30B29/06
Inventor 陈鹏李晓强
Owner 杭州晶宝新能源科技有限公司
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