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Light-emitting diode and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of uneven current diffusion, uneven thermal diffusion, and uneven light extraction of light-emitting diodes, and achieves improved current distribution uniformity, The effect of uniform distribution and improved heat dissipation

Active Publication Date: 2021-04-16
纳微朗科技(深圳)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the technical problems of uneven current diffusion, uneven thermal diffusion and uneven light extraction of light-emitting diodes in the prior art, this application proposes a light-emitting diode that effectively improves current distribution and improves the uniformity of current distribution

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  • Light-emitting diode and manufacturing method thereof
  • Light-emitting diode and manufacturing method thereof
  • Light-emitting diode and manufacturing method thereof

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0029] Such as figure 1 As shown, the vertical light emitting diode 10 according to the first embodiment of the present application includes: a substrate 11 , a light emitting epitaxial layer 12 , and a plurality of electrode patterns 13 . In this embodiment, the substrate 11 may be made of conductive materials such as Si, Ge, Cu, CuW and the like.

[0030] The light-emitting epitaxial layer 12 further includes a first semiconductor layer 121 , an active ligh...

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Abstract

The invention relates to the field of light-emitting diodes, and particularly discloses a light-emitting diode and a manufacturing method thereof. The light-emitting diode comprises a substrate, a light-emitting epitaxial layer and a plurality of electrode patterns; the light-emitting epitaxial layer comprises a first semiconductor layer, an active light-emitting layer and a second semiconductor layer which are sequentially stacked on the main surface of one side of the substrate; and the plurality of electrode patterns are buried in the first semiconductor layer or the second semiconductor layer, are connected with one another and are distributed in a grid shape. Through the mode, the technical problems of uneven current diffusion, uneven thermal diffusion and uneven light extraction of the light-emitting diode in the prior art can be solved, the current distribution is effectively improved, and the current distribution uniformity is improved.

Description

technical field [0001] The present application relates to the field of light-emitting diodes, in particular to a light-emitting diode and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor element that can convert electric current into light in a specific wavelength range. Light-emitting diodes can be widely used as light sources in the field of lighting because of their advantages such as high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] In the traditional nitride (nitride materials include AlN, GaN, InN and alloy compounds of the three) ultraviolet and visible light-emitting diode structures, the current formed by electrons is injected from the n-type electrode through the lateral diffusion of the n-type nitride semiconductor layer to the light emitting diode structure. The active region, while the cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/00
Inventor 蒋振宇闫春辉
Owner 纳微朗科技(深圳)有限公司
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