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A strain purified silicon substrate for semiconductor quantum computation and forming method thereof

A quantum computing, silicon substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high impact, low electron mobility of purified silicon, etc., to improve quality, great research significance and economic benefits , the effect of reducing the impact

Pending Publication Date: 2021-03-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above analysis, the present invention aims to provide a strained purified silicon substrate for semiconductor quantum computing and its formation method, to solve the problem that the epitaxial purified silicon is greatly affected by the natural silicon isotope composition of the substrate in the prior art, and the purification The problem with silicon's low electron mobility

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  • A strain purified silicon substrate for semiconductor quantum computation and forming method thereof
  • A strain purified silicon substrate for semiconductor quantum computation and forming method thereof
  • A strain purified silicon substrate for semiconductor quantum computation and forming method thereof

Examples

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Embodiment 1

[0093] The purified silicon-germanium substrate of this embodiment includes a natural silicon support substrate, a natural silicon oxide layer and a purified silicon-germanium layer stacked in sequence, see figure 1 , the specific formation method includes the following steps:

[0094] Step 1a: Provide a base substrate, thin the natural silicon layer in the base substrate, so that the thickness of the thinned natural silicon layer is less than 20nm, and epitaxially form multiple layers of silicon germanium on the thinned natural silicon layer A buffer layer, epitaxially forming a purified silicon germanium layer on the silicon germanium buffer layer located on the surface, to obtain a donor substrate;

[0095] A natural silicon support substrate is provided, and a layer of natural silicon oxide layer is formed on the natural silicon support substrate;

[0096] Step 1b: pressure bonding the donor substrate to the native silicon support substrate, both the base substrate and th...

Embodiment 2

[0101] The purified silicon germanium substrate of this embodiment comprises a natural silicon support substrate, a purified silicon oxide layer and a purified silicon germanium layer stacked in sequence, see figure 2 , the specific formation method includes the following steps:

[0102] Step 2a: Provide a base substrate, thin the natural silicon layer in the base substrate so that the thickness of the thinned natural silicon layer is less than 20nm, and epitaxially form multiple layers of silicon germanium on the thinned natural silicon layer A buffer layer, epitaxially forming a purified silicon germanium layer on the silicon germanium buffer layer located on the surface, to obtain a donor substrate;

[0103] Provide a natural silicon support substrate, and form a layer of pure silicon silicon oxide layer on the natural silicon support substrate;

[0104] Step 2b: pressure bonding the donor substrate to the native silicon support substrate, both the base substrate and the ...

Embodiment 3

[0109] The purified silicon-germanium substrate in this embodiment has the same structure as the purified silicon-germanium substrate provided in Embodiment 1, including a natural silicon support substrate, a natural silicon oxide layer and a purified silicon-germanium layer stacked in sequence, see image 3 , the specific formation method includes the following steps:

[0110] Step 3a: Provide a base substrate, thin the natural silicon layer in the base substrate, so that the thickness of the thinned natural silicon layer is less than 20nm, and epitaxially form multiple layers of silicon germanium on the thinned natural silicon layer A buffer layer, epitaxially forming a purified silicon germanium layer on the silicon germanium buffer layer located on the surface, and forming a layer of natural silicon oxide silicon layer on the purified silicon germanium layer to obtain a donor substrate;

[0111] providing a native silicon support substrate;

[0112] Step 3b: Diffusion bon...

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Abstract

The invention discloses a strain purified silicon substrate for semiconductor quantum calculation and a forming method thereof, belongs to the technical field of semiconductors, and aims to solve theproblems that epitaxial purified silicon is greatly influenced by natural silicon isotope components of a substrate and the electron mobility of the purified silicon is low in the prior art. The purified silicon germanium substrate comprises a natural silicon supporting substrate, an insulating layer, a purified silicon germanium layer and a purified silicon layer which are stacked in sequence. The forming method comprises the following steps: epitaxially forming a plurality of silicon-germanium buffer layers and purified silicon-germanium layers on a base substrate to obtain a donor substrate; providing a natural silicon support substrate; forming at least one insulating layer on the donor substrate and / or the natural silicon support substrate; bonding the donor substrate with a natural silicon support substrate, and removing the base substrate and the multiple silicon-germanium buffer layers or removing the base substrate, the multiple silicon-germanium buffer layers and part of thepurified silicon-germanium layer to obtain a purified silicon-germanium substrate; and epitaxially forming a purified silicon layer on the purified silicon germanium substrate to obtain the strain purified silicon substrate. The purified silicon germanium substrate and the forming method thereof can be used for semiconductor quantum calculation.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a strained purified silicon substrate for semiconductor quantum computing and a forming method thereof. Background technique [0002] Integrated circuits continue to develop along Moore's Law, and the feature size has reached 5nm and below at this stage. In a small size, the "heat loss effect" of circuit heat dissipation makes the classical calculation have a calculation upper limit, and at the same time, a "size effect" will occur in a small size, so that the classical physical laws are no longer applicable. Quantum computing can use the superposition characteristics of quantum mechanics to realize the superposition of computing states. It not only has the 0 and 1 modes of classical computing, but also contains its superposition state. Due to this characteristic, it can realize strong parallelism of one-click processing of multiple inputs. Compared with traditional progr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02381H01L21/02532H01L21/02488H01L21/0262
Inventor 王桂磊亨利·H·阿达姆松孔真真罗雪
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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