Photoelectric detector and using method thereof

Abstract

The invention discloses a photoelectric detector and a using method thereof, and relates to the field of optical communication integrated devices. The photoelectric detector comprises an incident waveguide used for propagating signal light; a silicon layer, provided with a germanium absorption region, and the germanium absorption region being used for detecting signal light and converting the signal light into an electric signal; a focusing device, used for focusing the signal light of the incident waveguide to the silicon layer under the germanium absorption region, and the width of a light beam converged when the signal light reaches the incident end of the germanium absorption region through the focusing device is larger than that of the germanium absorption region. The using method comprises the steps that signal light enters the focusing device through the incident waveguide; the focusing device focuses the signal light to the silicon layer right below the germanium absorption region, and enables the width of a converged light beam to be greater than the width of the germanium absorption region when the signal light reaches the incident end of the germanium absorption region;and the germanium absorption region converts the signal light into an electric signal. According to the photoelectric detector, the saturated absorption power of the photoelectric detector can be improved, signal distortion does not occur during photoelectric conversion, and the responsivity of the device can also be improved.

Description

technical field [0001] The present application relates to the field of optical communication integrated devices, in particular to a photodetector and a method for using the same. Background technique [0002] At present, silicon-based photonic chips have the advantages of compatibility with standard semiconductor processes, low cost, and high integration, and are gradually being widely adopted by the industry. In the field of optical communication, the device used at the receiving end of the silicon-on-chip integrated system is a waveguide-type silicon-germanium photodetector. [0003] In the related art, the waveguide-type germanium-silicon photodetector adopts a square structure, and light is incident from one end and exits from the corresponding other end, undergoing one-way absorption. However, since the incident light power decreases rapidly from the input end to the output end, in the case of high-power incident, the incident end is prone to saturated absorption, whic...

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Problems solved by technology

[0004] Aiming at one of the defects existing in the prior art, the purpose of this application is to provide a photodetector and its use method to solve the problem of saturated absorption easily occurring at the incident end of the waveguide-type silicon-germanium photodetector in the related art to cause photoelectric conversion Problems with signal distortion and reduced responsiveness

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