Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Broadband CMOS (Complementary Metal Oxide Semiconductor) power amplifier capable of reconstructing interstage matching

A power amplifier and inter-stage matching technology, which is applied in the direction of power amplifiers, amplifiers, amplifiers with semiconductor devices/discharge tubes, etc., can solve the problem of limiting the bandwidth of power stage amplifiers and the difficulty of single-stage power amplifier gain to meet the high gain of mobile communication terminals Requirements and other issues to achieve the effect of overcoming bandwidth limitations, high power output, and realizing broadband applications

Active Publication Date: 2021-03-16
CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the research focus of broadband power amplifiers is mainly on the design of single-stage power amplifier broadband load matching network. However, the gain of single-stage power amplifier is difficult to meet the high gain requirements of mobile communication terminals.
Although the design of the multi-stage power amplifier achieves high gain, the inter-stage matching of the multi-stage power amplifier is often a high-Q matching network with narrow-band characteristics, which limits the bandwidth of the power stage amplifier.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Broadband CMOS (Complementary Metal Oxide Semiconductor) power amplifier capable of reconstructing interstage matching
  • Broadband CMOS (Complementary Metal Oxide Semiconductor) power amplifier capable of reconstructing interstage matching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The present invention will be further described in detail below in conjunction with the embodiments and with reference to the accompanying drawings.

[0025] An embodiment of the present invention is a broadband CMOS power amplifier with reconfigurable inter-level matching, including a driver-level amplifier, a reconfigurable inter-level matching and a power-level amplifier, such as figure 1 shown. The interstage matching network circuit of this embodiment adopts SOI-CMOS technology, and on the basis of the C-L-C structure, the working modes of three frequency bands are realized by switching two groups of SOI-CMOS switches, so as to overcome the bandwidth of the high-Q interstage impedance matching network limit, to achieve broadband applications.

[0026] CMOS process, that is, complementary metal oxide semiconductor process, SOI, that is, silicon on insulating substrate, SOI-CMOS process, that is, a buried oxide layer is introduced into the substrate of the tradition...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a reconfigurable inter-stage matching broadband CMOS power amplifier, and belongs to the technical field of integrated circuits. A received radio frequency input signal is amplified by a driving-stage amplifier and then output to a power-stage amplifier through a reconfigurable inter-stage matching network to be amplified and then output; the reconfigurable inter-stage matching network comprises a CLC matching network, a reconfigurable matching capacitor, a reconfigurable matching inductor and two groups of switches; the two groups of switches are respectively connectedwith the reconfigurable matching capacitor and the reconfigurable matching inductor in series; according to different working frequency bands, the equivalent inductance values of the parallel inductor and the reconfigurable matching device in the CLC network are changed through on-off of the switch, so that the reconfiguration of the matching network is realized. The high-Q-value interstage impedance matching network is simple and reliable in structure, does not influence output power and efficiency, does not increase power consumption, can realize relatively high gain, and can ensure that multiple frequency bands meet high output power and high efficiency, thereby overcoming bandwidth limitation of the high-Q-value interstage impedance matching network and realizing broadband application.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a wideband CMOS power amplifier capable of reconfigurable inter-stage matching. Background technique [0002] As one of the core modules of wireless transmitters, power stage amplifiers are widely used in mobile communication systems. In mobile communication terminals, the design challenge of RF power amplifiers is mainly the application requirements of one power amplifier covering multiple frequency bands. A feasible solution is to design a broadband power stage amplifier, and then switch to a specific frequency band through a distributed switch. At present, the research focus of broadband power amplifiers is mainly on the design of single-stage power amplifier broadband load matching network. However, the gain of single-stage power amplifier is difficult to meet the high gain requirements of mobile communication terminals. Although the design of the mu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/42H03F1/56H03F3/24
CPCH03F3/245H03F1/42H03F1/565Y02D30/70
Inventor 竺磊张浩周阳阳赵远
Owner CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products